Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices

We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associa...

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Detalles Bibliográficos
Autores: Miranda, E.|||0000-0003-0470-5318, Piros, Eszter|||0000-0001-8714-9059, Aguirre, Fernando Leonel|||0000-0001-7793-1194, Kim, Taewook, Schreyer, Philipp|||0000-0002-7200-3855, Gehrunger, Jonas|||0000-0002-0585-7893, Schwarz, Tobias, Oster, Timo|||0000-0003-1501-2795, Hofmann, Klaus|||0000-0002-6675-0221, Suñé, Jordi|||0000-0003-0108-4907, Hochberger, Christian|||0000-0001-5516-7826, Alff, Lambert|||0000-0001-8185-4275
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:311288
Acceso en línea:https://ddd.uab.cat/record/311288
https://dx.doi.org/urn:doi:10.1109/TNANO.2025.3556856
Access Level:acceso abierto
Palabra clave:Memristor
Resistive switching
Energy consumption
Power dissipation
SPICE
LTspice
Descripción
Sumario:We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associated with power dissipation. This happens because of the dynamical aspects of the set and reset transitions which are ultimately dictated by the physics of metal ions and oxygen vacancies migration. It is shown that by adding a constant base voltage to the voltage sweep, shorter programming times can be achieved but no significant impact on the power dissipation-energy consumption relationship is observed. Modeling and simulations are carried out with the aid of the Dynamic Memdiode Model and its implementation in LTspice using the Method of Elementary Solvers. Since the device model parameters and simulation conditions can vary in a wide range, the complete schematics are provided so that the interested readers can test different casuistries by themselves.

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