Behavioral SPICE model for memristive crosspoint arrays operating in the nonlinear transport regime
In this letter, a fully behavioral SPICE model for M × N memristive crosspoint arrays (CPAs) is presented. The proposed approach incorporates the current-voltage characteristics of the memdiode model for resistive switching devices, which can account for both the linear (low-voltage) and nonlinear (...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:320276 |
| Acceso en línea: | https://ddd.uab.cat/record/320276 https://dx.doi.org/urn:doi:10.1016/j.sse.2025.109214 |
| Access Level: | acceso abierto |
| Palabra clave: | Memristor Resistive switching Crosspoint array SPICE LTspice |
| Sumario: | In this letter, a fully behavioral SPICE model for M × N memristive crosspoint arrays (CPAs) is presented. The proposed approach incorporates the current-voltage characteristics of the memdiode model for resistive switching devices, which can account for both the linear (low-voltage) and nonlinear (high-voltage) transport regimes of memristors. At low voltages, the model coincides with the conventional linear formulation based on matrix-vector multiplication (MVM) method. At high voltages, however, this algebraic operation is no longer valid. The model supports two operation modes depending on the requirements of the surrounding circuitry: voltage-controlled current source (VCCS) and voltage-controlled voltage source (VCVS). Current-controlled modes are also feasible for specific applications. Basic guidelines for applying these different modes are provided. |
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