High thermal conductivity in metallic θ-TaN single crystals

Metallic materials are critical in integrated circuits as they not only deliver electricity but also dissipate heat. However, their performance is constrained as the thermal conductivity of metals is capped with a value of ∼400 W m−1 K−1. Here, we shatter this long-standing ceiling by high-pressure...

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Autores: Liu, Yizhe, Zhou, Xuefeng, Pang, Guijian, Gu, Chao, Song, Guozhu, Chen, Jian, Carrete, Jesús, Fang, Leiming, Wang, Shanmin, Li, Wu, Sun, Bo
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2026
País:España
Recursos:Universidad de Zaragoza
Repositorio:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:dnet:zaguan______::a91a1b5c0849254ee5efe26058b7f7df
Acesso em linha:http://zaguan.unizar.es/record/171111
Access Level:acceso abierto
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spelling High thermal conductivity in metallic θ-TaN single crystalsLiu, YizheZhou, XuefengPang, GuijianGu, ChaoSong, GuozhuChen, JianCarrete, JesúsFang, LeimingWang, ShanminLi, WuSun, BoMetallic materials are critical in integrated circuits as they not only deliver electricity but also dissipate heat. However, their performance is constrained as the thermal conductivity of metals is capped with a value of ∼400 W m−1 K−1. Here, we shatter this long-standing ceiling by high-pressure synthesis of the metallic hexagonal tantalum mononitride (θ-TaN) single crystal with ultrahigh thermal conductivity. The synthesized θ-TaN single crystal exhibits a room-temperature thermal conductivity of 502 W m−1 K−1, exceeding the conventional upper limit for metallic thermal conductors, despite the presence of a substantial concentration of nitrogen vacancies. Our findings identify a clear pathway for further enhancing thermal conductivity through minimizing vacancy concentration in θ-TaN. This work establishes θ-TaN as a highly promising candidate for advanced thermal management applications and introduces a new approach for designing metallic conductors to surpass conventional limits.2026info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://zaguan.unizar.es/record/171111reponame:Zaguán. Repositorio Digital de la Universidad de Zaragozainstname:Universidad de ZaragozaInglésinfo:eu-repo/grantAgreement/ES/MICINN-AEI/PRTR-C17.I1info:eu-repo/grantAgreement/ES/MICIU/CEX2023-001286-Sinfo:eu-repo/semantics/openAccessoai:dnet:zaguan______::a91a1b5c0849254ee5efe26058b7f7df2026-05-29T13:59:51Z
dc.title.none.fl_str_mv High thermal conductivity in metallic θ-TaN single crystals
title High thermal conductivity in metallic θ-TaN single crystals
spellingShingle High thermal conductivity in metallic θ-TaN single crystals
Liu, Yizhe
title_short High thermal conductivity in metallic θ-TaN single crystals
title_full High thermal conductivity in metallic θ-TaN single crystals
title_fullStr High thermal conductivity in metallic θ-TaN single crystals
title_full_unstemmed High thermal conductivity in metallic θ-TaN single crystals
title_sort High thermal conductivity in metallic θ-TaN single crystals
dc.creator.none.fl_str_mv Liu, Yizhe
Zhou, Xuefeng
Pang, Guijian
Gu, Chao
Song, Guozhu
Chen, Jian
Carrete, Jesús
Fang, Leiming
Wang, Shanmin
Li, Wu
Sun, Bo
author Liu, Yizhe
author_facet Liu, Yizhe
Zhou, Xuefeng
Pang, Guijian
Gu, Chao
Song, Guozhu
Chen, Jian
Carrete, Jesús
Fang, Leiming
Wang, Shanmin
Li, Wu
Sun, Bo
author_role author
author2 Zhou, Xuefeng
Pang, Guijian
Gu, Chao
Song, Guozhu
Chen, Jian
Carrete, Jesús
Fang, Leiming
Wang, Shanmin
Li, Wu
Sun, Bo
author2_role author
author
author
author
author
author
author
author
author
author
description Metallic materials are critical in integrated circuits as they not only deliver electricity but also dissipate heat. However, their performance is constrained as the thermal conductivity of metals is capped with a value of ∼400 W m−1 K−1. Here, we shatter this long-standing ceiling by high-pressure synthesis of the metallic hexagonal tantalum mononitride (θ-TaN) single crystal with ultrahigh thermal conductivity. The synthesized θ-TaN single crystal exhibits a room-temperature thermal conductivity of 502 W m−1 K−1, exceeding the conventional upper limit for metallic thermal conductors, despite the presence of a substantial concentration of nitrogen vacancies. Our findings identify a clear pathway for further enhancing thermal conductivity through minimizing vacancy concentration in θ-TaN. This work establishes θ-TaN as a highly promising candidate for advanced thermal management applications and introduces a new approach for designing metallic conductors to surpass conventional limits.
publishDate 2026
dc.date.none.fl_str_mv 2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://zaguan.unizar.es/record/171111
url http://zaguan.unizar.es/record/171111
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/grantAgreement/ES/MICINN-AEI/PRTR-C17.I1
info:eu-repo/grantAgreement/ES/MICIU/CEX2023-001286-S
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv
publisher.none.fl_str_mv
dc.source.none.fl_str_mv reponame:Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname:Universidad de Zaragoza
instname_str Universidad de Zaragoza
reponame_str Zaguán. Repositorio Digital de la Universidad de Zaragoza
collection Zaguán. Repositorio Digital de la Universidad de Zaragoza
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