Analysis of the temperature dependence of the thermal conductivity of insulating single crystal oxides

The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from ≈20 K to 350 K. These crystals have been selected among the most common substrates for growing epitaxial thin-film oxides, spanning over a range of lattice parameters from ≈3.7 Å to ≈12.5 Å....

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Detalles Bibliográficos
Autores: Langenberg Pérez, Eric, Ferreiro Vila, Elías, Leborán Alvarez, Víctor, Fumega, Adolfo, Pardo, Victor, Rivadulla Fernández, José Francisco
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universidad de Santiago de Compostela (USC)
Repositorio:Minerva. Repositorio Institucional de la Universidad de Santiago de Compostela
Idioma:inglés
OAI Identifier:oai:minerva.usc.gal:10347/15962
Acceso en línea:http://hdl.handle.net/10347/15962
Access Level:acceso abierto
Descripción
Sumario:The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from ≈20 K to 350 K. These crystals have been selected among the most common substrates for growing epitaxial thin-film oxides, spanning over a range of lattice parameters from ≈3.7 Å to ≈12.5 Å. Different contributions to the phonon relaxation time are discussed on the basis of the Debye model. This work provides a database for the selection of appropriate substrates for thin-film growth according to their desired thermal properties, for applications in which heat management is important