Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations
We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demo...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/122630 |
| Acceso en línea: | https://hdl.handle.net/2445/122630 |
| Access Level: | acceso abierto |
| Palabra clave: | Optoelectrònica Nanoelectrònica Optoelectronics Nanoelectronics |
| Sumario: | We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demonstrate that the ratio between the optical terms and the transport rates determines the final device response. Furthermore, we showed that to obtain a net photocurrent the QD has to be asymmetrically coupled to the leads. |
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