Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations
We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demo...
| Authors: | , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2015 |
| Country: | España |
| Institution: | Universidad de Barcelona |
| Repository: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/122630 |
| Online Access: | https://hdl.handle.net/2445/122630 |
| Access Level: | Open access |
| Keyword: | Optoelectrònica Nanoelectrònica Optoelectronics Nanoelectronics |
| Summary: | We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demonstrate that the ratio between the optical terms and the transport rates determines the final device response. Furthermore, we showed that to obtain a net photocurrent the QD has to be asymmetrically coupled to the leads. |
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