Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites

Two-dimensional van der Waals materials hold significant promise for miniaturized, multifunctional, and high-performance electronic devices. The discovery of sliding ferroelectricity further enhances their potential applications. Currently, sliding ferroelectricity is primarily characterized by two...

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Autores: Sun, Jing, Fang, Yue-Wen, Niu, Ziyu, Zhang, Zekun, Sawyerr, Fatoye, Wan, Jingjing, Wang, Jing-Ching, Jing, Xixiang, Yu, Yue, Liu, Li-Min, Fan, Xiaoli, Cao, Tengfei
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:dnet:digitalcsic_::8eec7c55d54d2c218a5968953c948970
Acceso en línea:http://hdl.handle.net/10261/427285
Access Level:acceso abierto
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spelling Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisitesSun, JingFang, Yue-WenNiu, ZiyuZhang, ZekunSawyerr, FatoyeWan, JingjingWang, Jing-ChingJing, XixiangYu, YueLiu, Li-MinFan, XiaoliCao, TengfeiTwo-dimensional van der Waals materials hold significant promise for miniaturized, multifunctional, and high-performance electronic devices. The discovery of sliding ferroelectricity further enhances their potential applications. Currently, sliding ferroelectricity is primarily characterized by two opposite polarization states. However, the advancement of miniaturized, high-density information storage and transmission devices necessitates an increasing demand for multiple controllable polarization states. Here, by applying bilayer MnSb2Se4 as an example, we theoretically predict that multiple ferroelectric polarization states with an even number, such as quadruple- or sextuple-states, can be obtained in van der Waals materials through interlayer sliding. These multiple polarization states are derived from the different interlayer stacking modes of the top and bottom layers through interlayer slipping and are directly connected to the concentration of Mn–Sb antisites. In addition, symmetry analysis shows that each pair of multiple polarized states in MnSb2Se4 is combined by the ˆMzˆT symmetry. Therefore, the direction of anomalous Hall conductivity is directly determined and controlled by the electric polarizations. All these not only offer an effective mean of introducing multiple polarization states but also present an efficient technique for inducing and controlling anomalous Hall conductivity in electronic devices.This work was supported by the Fundamental Research Funds for the Central Universities (Grant No. G2023KY05102), the Natural Science Basic Research Program of Shaanxi (Program No. 2024JC-YBMS-009), the project of the National Natural Science Foundation of China (Program No. 12474061); the Shaanxi Qinchuangyuan High-Level Innovative and Entrepreneurial Talent Introduction Program (Grant No. QCYRCXM-2023-077), the Aviation Science Foundation of China (Grant No. 2021Z009053001), and the Innovation Capability Support Program of Shaanxi Program No. 2024RS-CXTD-30. T.C. also acknowledges the support from the Youth Project of “Shanxi High-level Talents Introduction Plan (Grant No. 5113240032).”Peer reviewedAmerican Institute of PhysicsFundamental Research Funds for the Central Universities (China)National Natural Science Foundation of ChinaNatural Science Foundation of Shaanxi ProvinceShaanxi Academy of SciencesConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202620262025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/427285reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésSun, Jing; Fang, Yue-Wen; Niu, Ziyu; Zhang, Zekun; Sawyerr, Fatoye; Wan, Jingjing; Wang, Jing-Ching; Jing, Xixiang; Yu, Yue; Liu, Li-Min; Fan, Xiaoli; Cao, Tengfei; 2025; Supplemental Material: Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites [Dataset]; Figshare; https://doi.org/10.1063/5.0294176https://doi.org/10.1063/5.0294176Síinfo:eu-repo/semantics/openAccessoai:dnet:digitalcsic_::8eec7c55d54d2c218a5968953c9489702026-05-22T06:33:51Z
dc.title.none.fl_str_mv Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
title Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
spellingShingle Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
Sun, Jing
title_short Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
title_full Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
title_fullStr Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
title_full_unstemmed Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
title_sort Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites
dc.creator.none.fl_str_mv Sun, Jing
Fang, Yue-Wen
Niu, Ziyu
Zhang, Zekun
Sawyerr, Fatoye
Wan, Jingjing
Wang, Jing-Ching
Jing, Xixiang
Yu, Yue
Liu, Li-Min
Fan, Xiaoli
Cao, Tengfei
author Sun, Jing
author_facet Sun, Jing
Fang, Yue-Wen
Niu, Ziyu
Zhang, Zekun
Sawyerr, Fatoye
Wan, Jingjing
Wang, Jing-Ching
Jing, Xixiang
Yu, Yue
Liu, Li-Min
Fan, Xiaoli
Cao, Tengfei
author_role author
author2 Fang, Yue-Wen
Niu, Ziyu
Zhang, Zekun
Sawyerr, Fatoye
Wan, Jingjing
Wang, Jing-Ching
Jing, Xixiang
Yu, Yue
Liu, Li-Min
Fan, Xiaoli
Cao, Tengfei
author2_role author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Fundamental Research Funds for the Central Universities (China)
National Natural Science Foundation of China
Natural Science Foundation of Shaanxi Province
Shaanxi Academy of Sciences
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description Two-dimensional van der Waals materials hold significant promise for miniaturized, multifunctional, and high-performance electronic devices. The discovery of sliding ferroelectricity further enhances their potential applications. Currently, sliding ferroelectricity is primarily characterized by two opposite polarization states. However, the advancement of miniaturized, high-density information storage and transmission devices necessitates an increasing demand for multiple controllable polarization states. Here, by applying bilayer MnSb2Se4 as an example, we theoretically predict that multiple ferroelectric polarization states with an even number, such as quadruple- or sextuple-states, can be obtained in van der Waals materials through interlayer sliding. These multiple polarization states are derived from the different interlayer stacking modes of the top and bottom layers through interlayer slipping and are directly connected to the concentration of Mn–Sb antisites. In addition, symmetry analysis shows that each pair of multiple polarized states in MnSb2Se4 is combined by the ˆMzˆT symmetry. Therefore, the direction of anomalous Hall conductivity is directly determined and controlled by the electric polarizations. All these not only offer an effective mean of introducing multiple polarization states but also present an efficient technique for inducing and controlling anomalous Hall conductivity in electronic devices.
publishDate 2025
dc.date.none.fl_str_mv 2025
2026
2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/427285
url http://hdl.handle.net/10261/427285
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Sun, Jing; Fang, Yue-Wen; Niu, Ziyu; Zhang, Zekun; Sawyerr, Fatoye; Wan, Jingjing; Wang, Jing-Ching; Jing, Xixiang; Yu, Yue; Liu, Li-Min; Fan, Xiaoli; Cao, Tengfei; 2025; Supplemental Material: Sliding multiple polarization states and controllable anomalous Hall conductivity in bilayer MnSb2Se4 with Mn–Sb antisites [Dataset]; Figshare; https://doi.org/10.1063/5.0294176
https://doi.org/10.1063/5.0294176
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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