| Sumario: | Two-dimensional van der Waals materials hold significant promise for miniaturized, multifunctional, and high-performance electronic devices. The discovery of sliding ferroelectricity further enhances their potential applications. Currently, sliding ferroelectricity is primarily characterized by two opposite polarization states. However, the advancement of miniaturized, high-density information storage and transmission devices necessitates an increasing demand for multiple controllable polarization states. Here, by applying bilayer MnSb2Se4 as an example, we theoretically predict that multiple ferroelectric polarization states with an even number, such as quadruple- or sextuple-states, can be obtained in van der Waals materials through interlayer sliding. These multiple polarization states are derived from the different interlayer stacking modes of the top and bottom layers through interlayer slipping and are directly connected to the concentration of Mn–Sb antisites. In addition, symmetry analysis shows that each pair of multiple polarized states in MnSb2Se4 is combined by the ˆMzˆT symmetry. Therefore, the direction of anomalous Hall conductivity is directly determined and controlled by the electric polarizations. All these not only offer an effective mean of introducing multiple polarization states but also present an efficient technique for inducing and controlling anomalous Hall conductivity in electronic devices.
|
|---|
