Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Ibáñez i Insa, Jordi; Oliva Vidal, Robert; Mare, M. de la; Schmidbauer, M.; Hernández Márquez, Sergi; Pellegrino, Paolo; Scurr, D. J.; Cuscó i Cornet, Ramon; Artús i Surroca, Lluís; Shafi, M.; Mari, R. H.; Henini, M.; Zhuang, Q.; Godenir, A.; Krier, A.

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content o...

Descripción completa

Detalles Bibliográficos
Autores:	Ibáñez i Insa, Jordi, Oliva Vidal, Robert, Mare, M. de la, Schmidbauer, M., Hernández Márquez, Sergi, Pellegrino, Paolo, Scurr, D. J., Cuscó i Cornet, Ramon, Artús i Surroca, Lluís, Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A., Krier, A.
Tipo de recurso:	artículo
Estado:	Versión publicada
Fecha de publicación:	2010
País:	España
Institución:	Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:	Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:	oai:recercat.cat:2445/28810
Acceso en línea:	https://hdl.handle.net/2445/28810
Access Level:	acceso abierto
Palabra clave:	Propietats òptiques Pel·lícules fines Difracció de raigs X Semiconductors Cristal·lografia Optical properties Thin films X-rays diffraction Crystallography

id	ES_94f69c350eaee6cebc490a6c2fb3f7ef
oai_identifier_str	oai:recercat.cat:2445/28810
network_acronym_str	ES
network_name_str	España
repository_id_str
spelling	Structural and optical properties of dilute InAsN grown by molecular beam epitaxyIbáñez i Insa, JordiOliva Vidal, RobertMare, M. de laSchmidbauer, M.Hernández Márquez, SergiPellegrino, PaoloScurr, D. J.Cuscó i Cornet, RamonArtús i Surroca, LluísShafi, M.Mari, R. H.Henini, M.Zhuang, Q.Godenir, A.Krier, A.Propietats òptiquesPel·lícules finesDifracció de raigs XSemiconductorsCristal·lografiaOptical propertiesThin filmsX-rays diffractionSemiconductorsCrystallographyWe perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.American Institute of Physics2012201220102012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion8 p.application/pdfhttps://hdl.handle.net/2445/28810Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.3509149Journal of Applied Physics, 2010, vol. 108, num. 1, p. 103504-1-103504-8http://dx.doi.org/10.1063/1.3509149(c) American Institute of Physics , 2010info:eu-repo/semantics/openAccessoai:recercat.cat:2445/288102026-05-29T05:05:01Z
dc.title.none.fl_str_mv	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
title	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
spellingShingle	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy Ibáñez i Insa, Jordi Propietats òptiques Pel·lícules fines Difracció de raigs X Semiconductors Cristal·lografia Optical properties Thin films X-rays diffraction Semiconductors Crystallography
title_short	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
title_full	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
title_fullStr	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
title_full_unstemmed	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
title_sort	Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
dc.creator.none.fl_str_mv	Ibáñez i Insa, Jordi Oliva Vidal, Robert Mare, M. de la Schmidbauer, M. Hernández Márquez, Sergi Pellegrino, Paolo Scurr, D. J. Cuscó i Cornet, Ramon Artús i Surroca, Lluís Shafi, M. Mari, R. H. Henini, M. Zhuang, Q. Godenir, A. Krier, A.
author	Ibáñez i Insa, Jordi
author_facet	Ibáñez i Insa, Jordi Oliva Vidal, Robert Mare, M. de la Schmidbauer, M. Hernández Márquez, Sergi Pellegrino, Paolo Scurr, D. J. Cuscó i Cornet, Ramon Artús i Surroca, Lluís Shafi, M. Mari, R. H. Henini, M. Zhuang, Q. Godenir, A. Krier, A.
author_role	author
author2	Oliva Vidal, Robert Mare, M. de la Schmidbauer, M. Hernández Márquez, Sergi Pellegrino, Paolo Scurr, D. J. Cuscó i Cornet, Ramon Artús i Surroca, Lluís Shafi, M. Mari, R. H. Henini, M. Zhuang, Q. Godenir, A. Krier, A.
author2_role	author author author author author author author author author author author author author author
dc.subject.none.fl_str_mv	Propietats òptiques Pel·lícules fines Difracció de raigs X Semiconductors Cristal·lografia Optical properties Thin films X-rays diffraction Semiconductors Crystallography
topic	Propietats òptiques Pel·lícules fines Difracció de raigs X Semiconductors Cristal·lografia Optical properties Thin films X-rays diffraction Semiconductors Crystallography
description	We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.
publishDate	2010
dc.date.none.fl_str_mv	2010 2012 2012 2012
dc.type.none.fl_str_mv	info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion
format	article
status_str	publishedVersion
dc.identifier.none.fl_str_mv	https://hdl.handle.net/2445/28810
url	https://hdl.handle.net/2445/28810
dc.language.none.fl_str_mv	Inglés
language_invalid_str_mv	Inglés
dc.relation.none.fl_str_mv	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3509149 Journal of Applied Physics, 2010, vol. 108, num. 1, p. 103504-1-103504-8 http://dx.doi.org/10.1063/1.3509149
dc.rights.none.fl_str_mv	(c) American Institute of Physics , 2010 info:eu-repo/semantics/openAccess
rights_invalid_str_mv	(c) American Institute of Physics , 2010
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	8 p. application/pdf
dc.publisher.none.fl_str_mv	American Institute of Physics
publisher.none.fl_str_mv	American Institute of Physics
dc.source.none.fl_str_mv	Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str	Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str	Recercat. Dipósit de la Recerca de Catalunya
collection	Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_	1869413736551284736
score	15.811543

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Similares en LA Referencia