Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content o...

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Detalles Bibliográficos
Autores: Ibáñez i Insa, Jordi, Oliva Vidal, Robert, Mare, M. de la, Schmidbauer, M., Hernández Márquez, Sergi, Pellegrino, Paolo, Scurr, D. J., Cuscó i Cornet, Ramon, Artús i Surroca, Lluís, Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A., Krier, A.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2010
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/28810
Acceso en línea:https://hdl.handle.net/2445/28810
Access Level:acceso abierto
Palabra clave:Propietats òptiques
Pel·lícules fines
Difracció de raigs X
Semiconductors
Cristal·lografia
Optical properties
Thin films
X-rays diffraction
Crystallography
Descripción
Sumario:We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.

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