Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime

The non-coherent rate equation approach to the electrical transport in a serial quantum dot system is presented. The charge density in each quantum dot is obtained using the transfer Hamiltonian formalism for the current expressions. The interactions between the quantum dots and between the quantum...

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Autores: Illera Robles, Sergio, Prades García, Juan Daniel, Cirera Hernández, Albert, Cornet i Calveras, Albert
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2012
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/98748
Acceso en línea:https://hdl.handle.net/2445/98748
Access Level:acceso abierto
Palabra clave:Sistemes hamiltonians
Semiconductors
Teoria quàntica
Estructura electrònica
Hamiltonian systems
Quantum theory
Electronic structure
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spelling Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regimeIllera Robles, SergioPrades García, Juan DanielCirera Hernández, AlbertCornet i Calveras, AlbertSistemes hamiltoniansSemiconductorsTeoria quànticaEstructura electrònicaHamiltonian systemsSemiconductorsQuantum theoryElectronic structureThe non-coherent rate equation approach to the electrical transport in a serial quantum dot system is presented. The charge density in each quantum dot is obtained using the transfer Hamiltonian formalism for the current expressions. The interactions between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. Within this framework analytical expressions for the current and the charge in each quantum dot are presented. The effects of the local potential are computed within the self-consistent field regime. Despite the simplicity of the model, well-known effects are satisfactorily explained and reproduced. We also show how this approach can be extended into a more general case.Institute of Physics (IOP)2016201620122016info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion7 p.application/pdfhttps://hdl.handle.net/2445/98748Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: http://dx.doi.org/10.1209/0295-5075/98/17003EPL, 2012, vol. 98, num. 1, p. 17003http://dx.doi.org/10.1209/0295-5075/98/17003info:eu-repo/grantAgreement/EC/FP7/245977(c) Europhysics Letters Association (EPLA), 2012info:eu-repo/semantics/openAccessoai:recercat.cat:2445/987482026-05-29T05:05:01Z
dc.title.none.fl_str_mv Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
title Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
spellingShingle Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
Illera Robles, Sergio
Sistemes hamiltonians
Semiconductors
Teoria quàntica
Estructura electrònica
Hamiltonian systems
Semiconductors
Quantum theory
Electronic structure
title_short Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
title_full Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
title_fullStr Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
title_full_unstemmed Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
title_sort Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
dc.creator.none.fl_str_mv Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
author Illera Robles, Sergio
author_facet Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
author_role author
author2 Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
author2_role author
author
author
dc.subject.none.fl_str_mv Sistemes hamiltonians
Semiconductors
Teoria quàntica
Estructura electrònica
Hamiltonian systems
Semiconductors
Quantum theory
Electronic structure
topic Sistemes hamiltonians
Semiconductors
Teoria quàntica
Estructura electrònica
Hamiltonian systems
Semiconductors
Quantum theory
Electronic structure
description The non-coherent rate equation approach to the electrical transport in a serial quantum dot system is presented. The charge density in each quantum dot is obtained using the transfer Hamiltonian formalism for the current expressions. The interactions between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. Within this framework analytical expressions for the current and the charge in each quantum dot are presented. The effects of the local potential are computed within the self-consistent field regime. Despite the simplicity of the model, well-known effects are satisfactorily explained and reproduced. We also show how this approach can be extended into a more general case.
publishDate 2012
dc.date.none.fl_str_mv 2012
2016
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/98748
url https://hdl.handle.net/2445/98748
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1209/0295-5075/98/17003
EPL, 2012, vol. 98, num. 1, p. 17003
http://dx.doi.org/10.1209/0295-5075/98/17003
info:eu-repo/grantAgreement/EC/FP7/245977
dc.rights.none.fl_str_mv (c) Europhysics Letters Association (EPLA), 2012
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Europhysics Letters Association (EPLA), 2012
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 7 p.
application/pdf
dc.publisher.none.fl_str_mv Institute of Physics (IOP)
publisher.none.fl_str_mv Institute of Physics (IOP)
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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