Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
The non-coherent rate equation approach to the electrical transport in a serial quantum dot system is presented. The charge density in each quantum dot is obtained using the transfer Hamiltonian formalism for the current expressions. The interactions between the quantum dots and between the quantum...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/98748 |
| Acceso en línea: | https://hdl.handle.net/2445/98748 |
| Access Level: | acceso abierto |
| Palabra clave: | Sistemes hamiltonians Semiconductors Teoria quàntica Estructura electrònica Hamiltonian systems Quantum theory Electronic structure |
| Sumario: | The non-coherent rate equation approach to the electrical transport in a serial quantum dot system is presented. The charge density in each quantum dot is obtained using the transfer Hamiltonian formalism for the current expressions. The interactions between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. Within this framework analytical expressions for the current and the charge in each quantum dot are presented. The effects of the local potential are computed within the self-consistent field regime. Despite the simplicity of the model, well-known effects are satisfactorily explained and reproduced. We also show how this approach can be extended into a more general case. |
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