Texture in ITO films deposited at oblique incidence by ion beam sputtering
Texture of crystalline In2O3:Sn (ITO) thin films prepared by combining ion beam sputtering (IBS) at room temperature and oblique angle deposition (OAD) has been studied depending on the vapor incidence on Si substrates (, ranging from 50◦ to 85◦) and the ions used to sputter the target (argon or xen...
| Autores: | , , , , , , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2022 |
| País: | España |
| Recursos: | Universidad de Sevilla (US) |
| Repositório: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:dnet:idus________::0865b659d912eaf4b336a666bb005b74 |
| Acesso em linha: | https://hdl.handle.net/11441/186969 https://doi.org/10.1016/j.apsusc.2022.154677 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Indium tin oxide Ion beam sputtering Oblique angle deposition Thin films Texture Morphology |
| Resumo: | Texture of crystalline In2O3:Sn (ITO) thin films prepared by combining ion beam sputtering (IBS) at room temperature and oblique angle deposition (OAD) has been studied depending on the vapor incidence on Si substrates (, ranging from 50◦ to 85◦) and the ions used to sputter the target (argon or xenon accelerated at 1.2 keV). Films obtained using Xe ions show an unusual evolution depending on the deposition angle , with the development of a dual biaxial (111) off-axis texture for ≤ 70◦, and a switching in the preferred out-of-plane orientation from [111] to [001] for > 70◦ that leads to a biaxial (001) texture at highest deposition angles. These behaviors are well described by mechanisms involving a maximization of the direct capture of the adatoms on {111} planes, which can however be hindered when mobilities are exalted such as in the case of Ar deposition. The tuning of adatoms mobilities through the IBS process mixed with the control of the deposition angle offered by the OAD geometry appears as an efficient route to achieve an upgraded texture engineering in nanostructured ITO thin films. |
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