Stress measurements in polycrystalline silicon films grown by hot-wire chemical vapor deposition
Stress measurements were carried out by the X-ray powder diffraction technique known as the 'sin 2? method' for polycrystalline silicon films grown by hot-wire chemical vapor deposition. Results show homogeneous biaxial stresses ranging from 110 MPa (tensile) to -210 MPa (compressive). The...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/98751 |
| Acceso en línea: | https://hdl.handle.net/2445/98751 |
| Access Level: | acceso abierto |
| Palabra clave: | Deposició química en fase vapor Silici Cèl·lules solars Chemical vapor deposition Silicon Solar cells |
| Sumario: | Stress measurements were carried out by the X-ray powder diffraction technique known as the 'sin 2? method' for polycrystalline silicon films grown by hot-wire chemical vapor deposition. Results show homogeneous biaxial stresses ranging from 110 MPa (tensile) to -210 MPa (compressive). The results are interpreted in terms of the dependence on the growth parameters and post-deposition oxidation. The deposition parameters that could be expected to give unstressed films by this technique, which are shifted to lower temperatures compared to other deposition methods, and the ability to measure stresses in randomly oriented polycrystalline silicon layers by this technique are shown in this paper. |
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