Towards control of the size, composition and surface area of NiO nanostructures by Sn doping
Achieving nanostructures with high surface area is one of the most challenging tasks as this metric usually plays a key role in technological applications, such as energy storage, gas sensing or photocatalysis, fields in which NiO is gaining increasing attention recently. Furthermore, the advent of...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/7992 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/7992 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Nickel oxide Nanoparticles Nanosticks High surface area Doping mechanisms Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | Achieving nanostructures with high surface area is one of the most challenging tasks as this metric usually plays a key role in technological applications, such as energy storage, gas sensing or photocatalysis, fields in which NiO is gaining increasing attention recently. Furthermore, the advent of modern NiO-based devices can take advantage of a deeper knowledge of the doping process in NiO, and the fabrication of p-n heterojunctions. By controlling experimental conditions such as dopant concentration, reaction time, temperature or pH, NiO morphology and doping mechanisms can be modulated. In this work, undoped and Sn doped nanoparticles and NiO/SnO_2 nanostructures with high surface areas were obtained as a result of Sn incorporation. We demonstrate that Sn incorporation leads to the formation of nanosticks morphology, not previously observed for undoped NiO, promoting p-n heterostructures. Consequently, a surface area value around 340 m^2/g was obtained for NiO nanoparticles with 4.7 at.% of Sn, which is nearly nine times higher than that of undoped NiO. The presence of Sn with different oxidation states and variable Ni^(3+)/Ni^(2+) ratio as a function of the Sn content were also verified by XPS, suggesting a combination of two charge compensation mechanisms (electronic and ionic) for the substitution of Ni^(2+) by Sn^(4+). These results make Sn doped NiO nanostructures a potential candidate for a high number of technological applications, in which implementations can be achieved in the form of NiO-SnO_2 p-n heterostructures. |
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