A flexoelectric microelectromechanical system on silicon

Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can...

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Detalhes bibliográficos
Autores: Bhaskar, Umesh Kumar, Banerjee, Nirupam, Abdollahi Hosnijeh, Amir|||0000-0003-0363-4984, Wang, Zhen, Scholm, Darrell G., Rijnders, Guus, Catalan, Gustau
Formato: artículo
Fecha de publicación:2016
País:España
Recursos:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/116673
Acesso em linha:https://hdl.handle.net/2117/116673
https://dx.doi.org/10.1039/C5NR06514C
Access Level:acceso abierto
Palavra-chave:Automatic control
Operations research
flexoelectricity
MEMS
nanoscale
piezoelectrics
Control automàtic
Investigació operativa
Classificació AMS::70 Mechanics of particles and systems::70Q05 Control of mechanical systems
Classificació AMS::90 Operations research, mathematical programming::90B Operations research and management science
Àrees temàtiques de la UPC::Matemàtiques i estadística::Matemàtica aplicada a les ciències
Àrees temàtiques de la UPC::Matemàtiques i estadística::Investigació operativa::Optimització
Descrição
Resumo:Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can be reversed at the nanoscale. Here, we demonstrate that flexoelectricity is a viable route to lead-free microelectromechanical and nanoelectromechanical systems. Specifically, we have fabricated a silicon-compatible thin-film cantilever actuator with a single flexoelectrically active layer of strontium titanate with a figure of merit (curvature divided by electric field) of 3.33 MV-1, comparable to that of state-of-the-art piezoelectric bimorph cantilevers.