Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

[EN]Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the 2D limit. Here, it...

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Detalles Bibliográficos
Autores: Henríquez‐Guerra, Eudomar, Ruiz, Alberto M., Galbiati, Marta, Cortés‐Flores, Álvaro, Brown, Daniel, Zamora‐Amo, Esteban, Almonte, Lisa, Shumilin, Andrei, Salvador-Sanchez, Juan, Pérez‐Rodríguez, Ana, Orue, Iñaki, Cantarero, Andrés, Castellanos‐Gomez, Andres, Mompeán, Federico, Garcia‐Hernandez, Mar, Navarro‐Moratalla, Efrén, Díez Fernández, Enrique, Amado Montero, Mario, Baldoví, José J., Calvo, M. Reyes
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/168796
Acceso en línea:http://hdl.handle.net/10366/168796
Access Level:acceso abierto
Palabra clave:Magnetoresistance
Magnetic Anisotropy in CrSBr
Strain Engineering
Descripción
Sumario:[EN]Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the 2D limit. Here, it is demonstrated that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few-layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature-dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the Néel temperature by ≈10 K. The experimental results are fully supported by first-principles calculations, which link the observed effects to a strain-driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine-tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices.

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