Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching
In current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:212906 |
| Acceso en línea: | https://ddd.uab.cat/record/212906 https://dx.doi.org/urn:doi:10.1002/smll.201500175 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanofabrication Height gradients High aspect- ratio vertical nanowires Metal assisted chemical etching Metamaterials |
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Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etchingOtte Ortiz, Marinus AlbertusSolís Tinoco, Verónica Iraís|||0000-0001-8797-7559Prieto Recio, Pilar|||0000-0001-8978-5139Borrisé, Xavier|||0000-0002-6491-4763Lechuga, Laura M|||0000-0001-5187-5358González, María Ujué|||0000-0001-7012-0049Sepúlveda, Borja|||0000-0002-1562-7602NanofabricationHeight gradientsHigh aspect- ratio vertical nanowiresMetal assisted chemical etchingMetamaterialsIn current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or etching techniques, is usually uniform, and on-chip variation of this parameter is difficult and generally limited to very simple patterns. Herein, a novel nanofabrication methodology is presented, which enables the generation of high aspect-ratio nanostructure arrays with height gradients in arbitrary directions by a single and fast etching process. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how nanostructure arrays with directional height gradients can be accurately tailored by: (i) the control of the mass transport through the nanohole array, (ii) the mechanical properties of the perforated metal layer, and (iii) the conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20-fold on-chip variation of nanostructure height in a spatial range of a few micrometers, offers a new tool for the creation of novel types of nano-assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how high aspect-ratio nanostructure arrays with directional height gradients can be accurately tailored by: i) control of mass transport through the nanohole array, ii) mechanical properties of the perforated metal layer, and iii) conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20- -fold on- -chip variation of nanostructure height in a spatial range of a few microns, offers a new tool for the creation of novel types of nano- -assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics. 22015-01-0120152015-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/212906https://dx.doi.org/urn:doi:10.1002/smll.201500175reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2011-12645-EMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2012-34280Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2011-29194-C02-01Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2013-48628-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2129062026-06-06T12:50:31Z |
| dc.title.none.fl_str_mv |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| title |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| spellingShingle |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching Otte Ortiz, Marinus Albertus Nanofabrication Height gradients High aspect- ratio vertical nanowires Metal assisted chemical etching Metamaterials |
| title_short |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| title_full |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| title_fullStr |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| title_full_unstemmed |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| title_sort |
Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching |
| dc.creator.none.fl_str_mv |
Otte Ortiz, Marinus Albertus Solís Tinoco, Verónica Iraís|||0000-0001-8797-7559 Prieto Recio, Pilar|||0000-0001-8978-5139 Borrisé, Xavier|||0000-0002-6491-4763 Lechuga, Laura M|||0000-0001-5187-5358 González, María Ujué|||0000-0001-7012-0049 Sepúlveda, Borja|||0000-0002-1562-7602 |
| author |
Otte Ortiz, Marinus Albertus |
| author_facet |
Otte Ortiz, Marinus Albertus Solís Tinoco, Verónica Iraís|||0000-0001-8797-7559 Prieto Recio, Pilar|||0000-0001-8978-5139 Borrisé, Xavier|||0000-0002-6491-4763 Lechuga, Laura M|||0000-0001-5187-5358 González, María Ujué|||0000-0001-7012-0049 Sepúlveda, Borja|||0000-0002-1562-7602 |
| author_role |
author |
| author2 |
Solís Tinoco, Verónica Iraís|||0000-0001-8797-7559 Prieto Recio, Pilar|||0000-0001-8978-5139 Borrisé, Xavier|||0000-0002-6491-4763 Lechuga, Laura M|||0000-0001-5187-5358 González, María Ujué|||0000-0001-7012-0049 Sepúlveda, Borja|||0000-0002-1562-7602 |
| author2_role |
author author author author author author |
| dc.subject.none.fl_str_mv |
Nanofabrication Height gradients High aspect- ratio vertical nanowires Metal assisted chemical etching Metamaterials |
| topic |
Nanofabrication Height gradients High aspect- ratio vertical nanowires Metal assisted chemical etching Metamaterials |
| description |
In current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or etching techniques, is usually uniform, and on-chip variation of this parameter is difficult and generally limited to very simple patterns. Herein, a novel nanofabrication methodology is presented, which enables the generation of high aspect-ratio nanostructure arrays with height gradients in arbitrary directions by a single and fast etching process. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how nanostructure arrays with directional height gradients can be accurately tailored by: (i) the control of the mass transport through the nanohole array, (ii) the mechanical properties of the perforated metal layer, and (iii) the conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20-fold on-chip variation of nanostructure height in a spatial range of a few micrometers, offers a new tool for the creation of novel types of nano-assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how high aspect-ratio nanostructure arrays with directional height gradients can be accurately tailored by: i) control of mass transport through the nanohole array, ii) mechanical properties of the perforated metal layer, and iii) conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20- -fold on- -chip variation of nanostructure height in a spatial range of a few microns, offers a new tool for the creation of novel types of nano- -assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics. |
| publishDate |
2015 |
| dc.date.none.fl_str_mv |
2 2015-01-01 2015 2015-01-01 |
| dc.type.none.fl_str_mv |
Article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://ddd.uab.cat/record/212906 https://dx.doi.org/urn:doi:10.1002/smll.201500175 |
| url |
https://ddd.uab.cat/record/212906 https://dx.doi.org/urn:doi:10.1002/smll.201500175 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.relation.none.fl_str_mv |
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2011-12645-E Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2012-34280 Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2011-29194-C02-01 Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2013-48628-R Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295 |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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openAccess |
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application/pdf |
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reponame:Dipòsit Digital de Documents de la UAB instname:Universitat Autònoma de Barcelona |
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