Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect

[EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measu...

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Autores: Abidi, El Hadj, Clericò, Vito, Calvo Gallego, Jaime, Taniguchi, T., Watanabe, K., Otsuji, T., Velázquez Pérez, Jesús Enrique, Meziani, Yahya Moubarak
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2026
País:España
Recursos:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/169070
Acesso em linha:http://hdl.handle.net/10366/169070
Access Level:acceso embargado
Palavra-chave:Boron
Graphene
Field effect transistors
Terahertz radiation
Detectors
Logic gates
Photoconductivity
Gratings
Electronics
Computing Methodologies
Signal Processing, Computer-Assisted
Terahertz Radiation
Nanotechnology
1203 Ciencia de los ordenadores
3325 Tecnología de las Telecomunicaciones
3307 Tecnología Electrónica
procesamiento de señales asistido por ordenador
radiación de terahercios
nanotecnología
electrónica
metodologías computacionales
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repository_id_str
spelling Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effectAbidi, El HadjClericò, VitoCalvo Gallego, JaimeTaniguchi, T.Watanabe, K.Otsuji, T.Velázquez Pérez, Jesús EnriqueMeziani, Yahya MoubarakBoronGrapheneField effect transistorsTerahertz radiationDetectorsLogic gatesPhotoconductivityGratingsElectronicsComputing MethodologiesSignal Processing, Computer-AssistedTerahertz RadiationNanotechnology1203 Ciencia de los ordenadores3325 Tecnología de las Telecomunicaciones3307 Tecnología Electrónicaprocesamiento de señales asistido por ordenadorradiación de teraherciosnanotecnologíaelectrónicametodologías computacionales[EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measured photocurrent was observed at a bias of different signs between the top and the back gates. This behavior was associated with the ratchet effect that is induced by both biasing and THz radiation. This opens the way for the development of new highly efficient detectors of terahertz radiation for different applications.This research was funded by the Spanish Agencia Estatal de Investigación under Grants Numbers PID2021-126483OB-I00 and PID2022-136869NB-C33. This work was performed in the Cooperative Research Project of the Research Institute of Electrical Communication, Tohoku University. This work was funded by the JSPS KAKENHI under grant number 21H04546, Japan.Agencia Estatal de Investigación (AEI)JSPS KAKENHI, Japan.IEEEinfo202620262026info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10366/169070reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésPID2021-126483OB-I00PID2022-136869NB-C3321H04546Attribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/embargoedAccessoai:gredos.usal.es:10366/1690702026-06-07T06:28:51Z
dc.title.none.fl_str_mv Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
title Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
spellingShingle Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
Abidi, El Hadj
Boron
Graphene
Field effect transistors
Terahertz radiation
Detectors
Logic gates
Photoconductivity
Gratings
Electronics
Computing Methodologies
Signal Processing, Computer-Assisted
Terahertz Radiation
Nanotechnology
1203 Ciencia de los ordenadores
3325 Tecnología de las Telecomunicaciones
3307 Tecnología Electrónica
procesamiento de señales asistido por ordenador
radiación de terahercios
nanotecnología
electrónica
metodologías computacionales
title_short Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
title_full Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
title_fullStr Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
title_full_unstemmed Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
title_sort Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
dc.creator.none.fl_str_mv Abidi, El Hadj
Clericò, Vito
Calvo Gallego, Jaime
Taniguchi, T.
Watanabe, K.
Otsuji, T.
Velázquez Pérez, Jesús Enrique
Meziani, Yahya Moubarak
author Abidi, El Hadj
author_facet Abidi, El Hadj
Clericò, Vito
Calvo Gallego, Jaime
Taniguchi, T.
Watanabe, K.
Otsuji, T.
Velázquez Pérez, Jesús Enrique
Meziani, Yahya Moubarak
author_role author
author2 Clericò, Vito
Calvo Gallego, Jaime
Taniguchi, T.
Watanabe, K.
Otsuji, T.
Velázquez Pérez, Jesús Enrique
Meziani, Yahya Moubarak
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Boron
Graphene
Field effect transistors
Terahertz radiation
Detectors
Logic gates
Photoconductivity
Gratings
Electronics
Computing Methodologies
Signal Processing, Computer-Assisted
Terahertz Radiation
Nanotechnology
1203 Ciencia de los ordenadores
3325 Tecnología de las Telecomunicaciones
3307 Tecnología Electrónica
procesamiento de señales asistido por ordenador
radiación de terahercios
nanotecnología
electrónica
metodologías computacionales
topic Boron
Graphene
Field effect transistors
Terahertz radiation
Detectors
Logic gates
Photoconductivity
Gratings
Electronics
Computing Methodologies
Signal Processing, Computer-Assisted
Terahertz Radiation
Nanotechnology
1203 Ciencia de los ordenadores
3325 Tecnología de las Telecomunicaciones
3307 Tecnología Electrónica
procesamiento de señales asistido por ordenador
radiación de terahercios
nanotecnología
electrónica
metodologías computacionales
description [EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measured photocurrent was observed at a bias of different signs between the top and the back gates. This behavior was associated with the ratchet effect that is induced by both biasing and THz radiation. This opens the way for the development of new highly efficient detectors of terahertz radiation for different applications.
publishDate 2026
dc.date.none.fl_str_mv 2026
2026
2026
info
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/169070
url http://hdl.handle.net/10366/169070
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv PID2021-126483OB-I00
PID2022-136869NB-C33
21H04546
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/embargoedAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv embargoedAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869412714595483648
score 15,811543

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