Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
[EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measu...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2026 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/169070 |
| Acceso en línea: | http://hdl.handle.net/10366/169070 |
| Access Level: | acceso embargado |
| Palabra clave: | Boron Graphene Field effect transistors Terahertz radiation Detectors Logic gates Photoconductivity Gratings Electronics Computing Methodologies Signal Processing, Computer-Assisted Terahertz Radiation Nanotechnology 1203 Ciencia de los ordenadores 3325 Tecnología de las Telecomunicaciones 3307 Tecnología Electrónica procesamiento de señales asistido por ordenador radiación de terahercios nanotecnología electrónica metodologías computacionales |
| Sumario: | [EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measured photocurrent was observed at a bias of different signs between the top and the back gates. This behavior was associated with the ratchet effect that is induced by both biasing and THz radiation. This opens the way for the development of new highly efficient detectors of terahertz radiation for different applications. |
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