UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a sur...

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Authors: Lähnemann, Jonas, Den Hertog, Martien, Hille, Pascal, De La Mata, Maria|||0000-0002-1581-4838, Fournier, Thierry, Schörmann, Jörg, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Eickhoff, Martin, Monroy, Eva
Format: article
Publication Date:2016
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:195660
Online Access:https://ddd.uab.cat/record/195660
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.6b00806
Access Level:Open access
Keyword:AlN
GaN
Nanowires
Photocurrent spectroscopy
Photoluminescence spectroscopy
UV photodetector
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spelling UV Photosensing Characteristics of Nanowire-Based GaN/AlN SuperlatticesLähnemann, JonasDen Hertog, MartienHille, PascalDe La Mata, Maria|||0000-0002-1581-4838Fournier, ThierrySchörmann, JörgArbiol i Cobos, Jordi|||0000-0002-0695-1726Eickhoff, MartinMonroy, EvaAlNGaNNanowiresPhotocurrent spectroscopyPhotoluminescence spectroscopyUV photodetectorWe have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current. 22016-01-0120162016-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/195660https://dx.doi.org/urn:doi:10.1021/acs.nanolett.6b00806reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-51480-ERCEuropean Commission https://doi.org/10.13039/501100000780 278428open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:1956602026-06-06T12:50:31Z
dc.title.none.fl_str_mv UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
title UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
spellingShingle UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Lähnemann, Jonas
AlN
GaN
Nanowires
Photocurrent spectroscopy
Photoluminescence spectroscopy
UV photodetector
title_short UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
title_full UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
title_fullStr UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
title_full_unstemmed UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
title_sort UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
dc.creator.none.fl_str_mv Lähnemann, Jonas
Den Hertog, Martien
Hille, Pascal
De La Mata, Maria|||0000-0002-1581-4838
Fournier, Thierry
Schörmann, Jörg
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Eickhoff, Martin
Monroy, Eva
author Lähnemann, Jonas
author_facet Lähnemann, Jonas
Den Hertog, Martien
Hille, Pascal
De La Mata, Maria|||0000-0002-1581-4838
Fournier, Thierry
Schörmann, Jörg
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Eickhoff, Martin
Monroy, Eva
author_role author
author2 Den Hertog, Martien
Hille, Pascal
De La Mata, Maria|||0000-0002-1581-4838
Fournier, Thierry
Schörmann, Jörg
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Eickhoff, Martin
Monroy, Eva
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv AlN
GaN
Nanowires
Photocurrent spectroscopy
Photoluminescence spectroscopy
UV photodetector
topic AlN
GaN
Nanowires
Photocurrent spectroscopy
Photoluminescence spectroscopy
UV photodetector
description We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current.
publishDate 2016
dc.date.none.fl_str_mv 2
2016-01-01
2016
2016-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/195660
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.6b00806
url https://ddd.uab.cat/record/195660
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.6b00806
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-51480-ERC
European Commission https://doi.org/10.13039/501100000780 278428
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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