Understanding the nonlinear response of SiPMs
A systematic study of the nonlinear response of Silicon Photomultipliers (SiPMs) was conducted through Monte Carlo (MC) simulations. The MC code was validated against experimental data for two different SiPMs. Nonlinearity mainly depends on the balance between the photon rate and the pixel recovery...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/113928 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/113928 |
| Access Level: | acceso abierto |
| Palabra clave: | 539.1 536.9 Silicon photomultipliers SiPM Nonlinearity Monte Carlo simulation Statistical model Correlated noise Física (Física) 22 Física |
| Sumario: | A systematic study of the nonlinear response of Silicon Photomultipliers (SiPMs) was conducted through Monte Carlo (MC) simulations. The MC code was validated against experimental data for two different SiPMs. Nonlinearity mainly depends on the balance between the photon rate and the pixel recovery time. Additionally, nonlinearity has been found to depend on the light pulse shape, the correlated noise, the overvoltage dependence of the photon detection efficiency, and the impedance of the readout circuit. Correlated noise has been shown to have a minor impact on nonlinearity, but it can significantly affect the shape of the SiPM output current. Considering these dependencies and a previous statistical analysis of the nonlinear response of SiPMs, two phenomenological fitting models were proposed for exponential-like and finite light pulses, explaining the roles of their various terms and parameters. These models provide an accurate description of the nonlinear responses of SiPMs at the level of a few percentages for a wide range of situations. |
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