High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties

Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were investigated using heavy ion elastic recoil detection an...

Descripción completa

Detalles Bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, Lucía Mulas, María Luisa, San Andrés Serrano, Enrique
Tipo de recurso: artículo
Fecha de publicación:2007
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/51106
Acceso en línea:https://hdl.handle.net/20.500.14352/51106
Access Level:acceso abierto
Palabra clave:537
Oxide Gate Dielectrics
Hafnium Oxide
Thin-Films
Binary Oxides
Silicon
Zorconium
ERDA.
Electricidad
Electrónica (Física)
2202.03 Electricidad
id ES_804ff48cc9c8a45809510fc6a4ea888e
oai_identifier_str oai:docta.ucm.es:20.500.14352/51106
network_acronym_str ES
network_name_str España
repository_id_str
spelling High-pressure reactively sputtered HfO2: Composition, morphology, and optical propertiesMartil De La Plaza, IgnacioGonzález Díaz, GermánLucía Mulas, María LuisaSan Andrés Serrano, Enrique537Oxide Gate DielectricsHafnium OxideThin-FilmsBinary OxidesSiliconZorconiumERDA.ElectricidadElectrónica (Física)2202.03 ElectricidadHafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were investigated using heavy ion elastic recoil detection analysis, Fourier transform infrared spectroscopy, ultraviolet-visible-near infrared spectroscopy, x-ray diffraction, and transmission electron microscopy. The films showed a monoclinic polycrystalline structure, with a grain size depending on the deposition pressure. All films were slightly oxygen rich with respect to stoichiometric HfO2 and presented a significant amount of hydrogen (up to 6 at. %), which is attributed to the high affinity for moisture of the HfO2 films. The absorption coefficient was fitted to the Tauc law, obtaining a band gap value of 5.54 eV. It was found that the growth rate of the HfO2 films depends on the deposition pressure (P) as P-1.75. This dependence is explained by a diffusion model of the thermalized atoms in high-pressure sputtering. Additionally, the formation of an interfacial silicon oxide layer when the films were grown on silicon was observed, with a minimum thickness for deposition pressures around 1.2 mbars. This interfacial layer was formed mainly during the initial stages of the deposition process, with only a slight increase in thickness afterwards. These results are explained by the oxidizing action of the oxygen plasma and the diffusion of oxygen radicals and hydroxyl groups through the polycrystalline HfO2 film. Finally, the dielectric properties of the HfO2/SiO2 stacks were studied by means of conductance and capacitance measurements on Al/HfO2/SiO2/Si devices as a function of gate voltage and ac frequency signal.American Institute of PhysicsUniversidad Complutense de Madrid20072007-08-1520072007-08-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/51106reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/511062026-06-02T12:44:21Z
dc.title.none.fl_str_mv High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
title High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
spellingShingle High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
Martil De La Plaza, Ignacio
537
Oxide Gate Dielectrics
Hafnium Oxide
Thin-Films
Binary Oxides
Silicon
Zorconium
ERDA.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
title_full High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
title_fullStr High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
title_full_unstemmed High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
title_sort High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
Lucía Mulas, María Luisa
San Andrés Serrano, Enrique
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
Lucía Mulas, María Luisa
San Andrés Serrano, Enrique
author_role author
author2 González Díaz, Germán
Lucía Mulas, María Luisa
San Andrés Serrano, Enrique
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Oxide Gate Dielectrics
Hafnium Oxide
Thin-Films
Binary Oxides
Silicon
Zorconium
ERDA.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Oxide Gate Dielectrics
Hafnium Oxide
Thin-Films
Binary Oxides
Silicon
Zorconium
ERDA.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were investigated using heavy ion elastic recoil detection analysis, Fourier transform infrared spectroscopy, ultraviolet-visible-near infrared spectroscopy, x-ray diffraction, and transmission electron microscopy. The films showed a monoclinic polycrystalline structure, with a grain size depending on the deposition pressure. All films were slightly oxygen rich with respect to stoichiometric HfO2 and presented a significant amount of hydrogen (up to 6 at. %), which is attributed to the high affinity for moisture of the HfO2 films. The absorption coefficient was fitted to the Tauc law, obtaining a band gap value of 5.54 eV. It was found that the growth rate of the HfO2 films depends on the deposition pressure (P) as P-1.75. This dependence is explained by a diffusion model of the thermalized atoms in high-pressure sputtering. Additionally, the formation of an interfacial silicon oxide layer when the films were grown on silicon was observed, with a minimum thickness for deposition pressures around 1.2 mbars. This interfacial layer was formed mainly during the initial stages of the deposition process, with only a slight increase in thickness afterwards. These results are explained by the oxidizing action of the oxygen plasma and the diffusion of oxygen radicals and hydroxyl groups through the polycrystalline HfO2 film. Finally, the dielectric properties of the HfO2/SiO2 stacks were studied by means of conductance and capacitance measurements on Al/HfO2/SiO2/Si devices as a function of gate voltage and ac frequency signal.
publishDate 2007
dc.date.none.fl_str_mv 2007
2007-08-15
2007
2007-08-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/51106
url https://hdl.handle.net/20.500.14352/51106
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869411889338908672
score 15,300724

Similares en LA Referencia