Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2...
| Autores: | , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51104 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/51104 |
| Access Level: | acceso abierto |
| Palavra-chave: | 537 Thin-Films. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Resumo: | High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering. |
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