Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3

Optical switching of ferroelectric polarization is of interest for wireless and energy-efficient control of logic states. So far, this phenomenon has been widely demonstrated only in ferroelectric perovskites, while studies on other emerging ferroelectrics remain limited. In this regard, the paradig...

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Autores: Dong, Wenjing, Tan, Huan, Zou, Jingye, Quintana, Alberto, Song, Tingfeng, Magén Domínguez, César|||0000-0002-6761-6171, Cazorla Silva, Claudio|||0000-0002-6501-4513, Sanchez Barrera, Florencio, Fina, Ignasi
Tipo de recurso: artículo
Fecha de publicación:2026
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:dnet:upcommonspor::68c88638b08fbecb1d763c817accd93f
Acceso en línea:https://hdl.handle.net/2117/460770
https://dx.doi.org/10.1007/s40820-026-02090-2
Access Level:acceso abierto
Palabra clave:HfO2
Hafnium oxide
Multilayers
Hf0.5Zr0.5O2
Ferroelectric
Optoelectric
Àrees temàtiques de la UPC::Física::Electromagnetisme
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spelling Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3Dong, WenjingTan, HuanZou, JingyeQuintana, AlbertoSong, TingfengMagén Domínguez, César|||0000-0002-6761-6171Cazorla Silva, Claudio|||0000-0002-6501-4513Sanchez Barrera, FlorencioFina, IgnasiHfO2Hafnium oxideMultilayersHf0.5Zr0.5O2FerroelectricOptoelectricÀrees temàtiques de la UPC::Física::ElectromagnetismeOptical switching of ferroelectric polarization is of interest for wireless and energy-efficient control of logic states. So far, this phenomenon has been widely demonstrated only in ferroelectric perovskites, while studies on other emerging ferroelectrics remain limited. In this regard, the paradigmatic example of a technologically relevant ferroelectric material is HfO2. However, HfO2 has a very wide bandgap, limiting light absorption. So far, the proposed strategies to enhance light absorption in HfO2-based systems are detrimental to ferroelectric properties, i.e., bandgap lowering or on-purpose defect introduction, which reduce switchable polarization and increase the presence of leakage currents. Here, we show that good ferroelectric properties, i.e., sizeable polarization (up to 15 µC cm-2), low leakage current (under 10–6 A cm-2), high endurance (up to 108 cycles) and fast switching (<¿50 ns), can be achieved in epitaxial Hf0.5Zr0.5O2 films through an alternative strategy, BaTiO3 capping. While ferroelectric properties are remarkable, we demonstrate that the presence of BaTiO3 allows light absorption and the concomitant electric field generation, as supported by density functional theory calculations, which enables optical switching of polarization in Hf0.5Zr0.5O2 under 405 nm illumination. It is observed that optical switching is more efficient in films with thicker BaTiO3 capping layer. The high polarizability of BaTiO3 contributes to minimizing degradation in the ferroelectric response of the system. The results presented here indicate that appropriate designs can be followed to obtain optical switching of polarization in ferroelectric HfO2 while preserving main functional properties.Financial support from the Spanish Ministry of Science, Innovation and Universities (MCIN/AEI/ https://doi.org/10.13039/501100011033), through the Severo Ochoa MATRANS42 (CEX2023-001263-S) and CEX2023-001286-S, PDC2023-145874-I00, PID2023-147211OB-C21, PID2023-147211OB-C22 and TED2021-130453B-C21 projects, from Generalitat de Catalunya (2021 SGR 00804) and from Gobierno de Aragon project E13_23R is acknowledged. W.D. is financially supported by China Scholarship Council (CSC) with No. 202208310089. W.D. work has been done as a part of her Ph.D. program in Materials Science at Universitat Autònoma de Barcelona. We acknowledge the assistance of the ICMAB-CSIC Scientific & Technical Services: Thin Films Laboratory (Raul Solanas and Victor Pardo) and X-ray Diffraction Laboratory (Anna Crespi, Joan Esquius and Francisco Javier Campos). Authors acknowledge the use of instrumentation as well as the technical advice provided by the National Facility ELECMI ICTS, node «Laboratorio de Microscopias Avanzadas (LMA)» at «Universidad de Zaragoza».Peer Reviewed20262026-02-0620262026-04-20journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/460770https://dx.doi.org/10.1007/s40820-026-02090-2reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:dnet:upcommonspor::68c88638b08fbecb1d763c817accd93f2026-05-27T15:37:01Z
dc.title.none.fl_str_mv Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
title Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
spellingShingle Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
Dong, Wenjing
HfO2
Hafnium oxide
Multilayers
Hf0.5Zr0.5O2
Ferroelectric
Optoelectric
Àrees temàtiques de la UPC::Física::Electromagnetisme
title_short Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
title_full Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
title_fullStr Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
title_full_unstemmed Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
title_sort Optical switching of robust ferroelectric polarization on epitaxial Hf0.5Zr0.5O2 integrated with BaTiO3
dc.creator.none.fl_str_mv Dong, Wenjing
Tan, Huan
Zou, Jingye
Quintana, Alberto
Song, Tingfeng
Magén Domínguez, César|||0000-0002-6761-6171
Cazorla Silva, Claudio|||0000-0002-6501-4513
Sanchez Barrera, Florencio
Fina, Ignasi
author Dong, Wenjing
author_facet Dong, Wenjing
Tan, Huan
Zou, Jingye
Quintana, Alberto
Song, Tingfeng
Magén Domínguez, César|||0000-0002-6761-6171
Cazorla Silva, Claudio|||0000-0002-6501-4513
Sanchez Barrera, Florencio
Fina, Ignasi
author_role author
author2 Tan, Huan
Zou, Jingye
Quintana, Alberto
Song, Tingfeng
Magén Domínguez, César|||0000-0002-6761-6171
Cazorla Silva, Claudio|||0000-0002-6501-4513
Sanchez Barrera, Florencio
Fina, Ignasi
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv HfO2
Hafnium oxide
Multilayers
Hf0.5Zr0.5O2
Ferroelectric
Optoelectric
Àrees temàtiques de la UPC::Física::Electromagnetisme
topic HfO2
Hafnium oxide
Multilayers
Hf0.5Zr0.5O2
Ferroelectric
Optoelectric
Àrees temàtiques de la UPC::Física::Electromagnetisme
description Optical switching of ferroelectric polarization is of interest for wireless and energy-efficient control of logic states. So far, this phenomenon has been widely demonstrated only in ferroelectric perovskites, while studies on other emerging ferroelectrics remain limited. In this regard, the paradigmatic example of a technologically relevant ferroelectric material is HfO2. However, HfO2 has a very wide bandgap, limiting light absorption. So far, the proposed strategies to enhance light absorption in HfO2-based systems are detrimental to ferroelectric properties, i.e., bandgap lowering or on-purpose defect introduction, which reduce switchable polarization and increase the presence of leakage currents. Here, we show that good ferroelectric properties, i.e., sizeable polarization (up to 15 µC cm-2), low leakage current (under 10–6 A cm-2), high endurance (up to 108 cycles) and fast switching (<¿50 ns), can be achieved in epitaxial Hf0.5Zr0.5O2 films through an alternative strategy, BaTiO3 capping. While ferroelectric properties are remarkable, we demonstrate that the presence of BaTiO3 allows light absorption and the concomitant electric field generation, as supported by density functional theory calculations, which enables optical switching of polarization in Hf0.5Zr0.5O2 under 405 nm illumination. It is observed that optical switching is more efficient in films with thicker BaTiO3 capping layer. The high polarizability of BaTiO3 contributes to minimizing degradation in the ferroelectric response of the system. The results presented here indicate that appropriate designs can be followed to obtain optical switching of polarization in ferroelectric HfO2 while preserving main functional properties.
publishDate 2026
dc.date.none.fl_str_mv 2026
2026-02-06
2026
2026-04-20
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/460770
https://dx.doi.org/10.1007/s40820-026-02090-2
url https://hdl.handle.net/2117/460770
https://dx.doi.org/10.1007/s40820-026-02090-2
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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