Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives
We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO 2/Si substrates. Then the optimum geo...
| Autores: | , , , , , , , , , , , , |
|---|---|
| Formato: | artículo |
| Fecha de publicación: | 2012 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/103479 |
| Acesso em linha: | http://hdl.handle.net/10261/103479 |
| Access Level: | acceso abierto |
| Palavra-chave: | Thin films Organic transistor. Organic field-effect transistors Tetrathiafulvalene derivatives |
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Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivativesMarszalek, T.Nosal, T.Pfattner, RaphaelJung, J.Kotarba, S.Mas Torrent, MartaKrause, B.Veciana, JaumeGazicki-Lipman, M.Crickert, CSchmidt, G.Rovira, ConcepcióUlanski, J.Thin filmsOrganic transistor.Organic field-effect transistorsTetrathiafulvalene derivativesWe report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO 2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μ FET = 0.1 cm 2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved.The authors thank the EU NoE FlexNet (FP7-ICT 247745), EU Large Project One-P (FP7-NMP-2007-212311), Marie Curie Est FuMaSSEC, the DGI (Spain, CTQ2006-06333/BQU and CTQ2010-19501), the Generalitat de Catalunya (2009SGR00516), Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN) and the bilateral project Poland–Spain (MAT2006-28191-E, HISZPANIA/140/2006) and N° N N209 185436 and No N507 399939. We also thank Dr. Elba Gomar-Nadal, Dr. Josep Puigmartí and Dr. David Amabilino for their help and advice.Peer ReviewedElsevier2014201420122014info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/103479reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/FP7/247745info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1034792026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| title |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| spellingShingle |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives Marszalek, T. Thin films Organic transistor. Organic field-effect transistors Tetrathiafulvalene derivatives |
| title_short |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| title_full |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| title_fullStr |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| title_full_unstemmed |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| title_sort |
Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
| dc.creator.none.fl_str_mv |
Marszalek, T. Nosal, T. Pfattner, Raphael Jung, J. Kotarba, S. Mas Torrent, Marta Krause, B. Veciana, Jaume Gazicki-Lipman, M. Crickert, C Schmidt, G. Rovira, Concepció Ulanski, J. |
| author |
Marszalek, T. |
| author_facet |
Marszalek, T. Nosal, T. Pfattner, Raphael Jung, J. Kotarba, S. Mas Torrent, Marta Krause, B. Veciana, Jaume Gazicki-Lipman, M. Crickert, C Schmidt, G. Rovira, Concepció Ulanski, J. |
| author_role |
author |
| author2 |
Nosal, T. Pfattner, Raphael Jung, J. Kotarba, S. Mas Torrent, Marta Krause, B. Veciana, Jaume Gazicki-Lipman, M. Crickert, C Schmidt, G. Rovira, Concepció Ulanski, J. |
| author2_role |
author author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Thin films Organic transistor. Organic field-effect transistors Tetrathiafulvalene derivatives |
| topic |
Thin films Organic transistor. Organic field-effect transistors Tetrathiafulvalene derivatives |
| description |
We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO 2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μ FET = 0.1 cm 2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved. |
| publishDate |
2012 |
| dc.date.none.fl_str_mv |
2012 2014 2014 2014 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/103479 |
| url |
http://hdl.handle.net/10261/103479 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
#PLACEHOLDER_PARENT_METADATA_VALUE# info:eu-repo/grantAgreement/EC/FP7/247745 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
Elsevier |
| publisher.none.fl_str_mv |
Elsevier |
| dc.source.none.fl_str_mv |
reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
| instname_str |
Consejo Superior de Investigaciones Científicas (CSIC) |
| reponame_str |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869411722571284480 |
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15.811543 |