Deposition of composite materials using a wire-bar coater for achieving processability and air-stability in Organic Field-Effect Transistors (OFETs)
Organic thin films based on composite materials of semiconducting dibenzo-tetrathiafulvalene (DB-TTF) and insulating styrenic matrices (Polystyrene (PS10k) and Poly-alpha methylstyrene (PAMS10k) ) have been fabricated by the wire-bar coating technique in ambient conditions (air, light, humidity) and...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/134419 |
| Acceso en línea: | http://hdl.handle.net/10261/134419 |
| Access Level: | acceso abierto |
| Palabra clave: | Wire-bar coating Composite materials Organic field-effect transistors |
| Sumario: | Organic thin films based on composite materials of semiconducting dibenzo-tetrathiafulvalene (DB-TTF) and insulating styrenic matrices (Polystyrene (PS10k) and Poly-alpha methylstyrene (PAMS10k) ) have been fabricated by the wire-bar coating technique in ambient conditions (air, light, humidity) and contrasted with the ones prepared by thermally evaporating the organic semiconductor. The transistors fabricated with DB-TTF:PS10k composites show a clear fieldeffect behavior with p-type characteristics, exhibiting charge carriers mobilities in the range of 0.01 cm2/Vs, fully comparable with the films obtained by thermal evaporation. However, while the thermally evaporated films show poor stability in air, the wire-bar coated composites films and devices are highly reproducible and exhibit lower threshold voltage values. Thus, we demonstrate the suitability of the wire-bar technique for manufacturing large area devices. |
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