Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices
The following article appeared in Applied Physics Letters 101.25 (2012): 253501 and may be found at http://scitation.aip.org/content/aip/journal/apl/101/25/10.1063/1.4767131
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2012 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/662055 |
| Acceso en línea: | http://hdl.handle.net/10486/662055 https://dx.doi.org/10.1063/1.4767131 |
| Access Level: | acceso abierto |
| Palabra clave: | Zinc Thin film transistors Photolithography Sputter deposition Thin film growth Física |
| Sumario: | The following article appeared in Applied Physics Letters 101.25 (2012): 253501 and may be found at http://scitation.aip.org/content/aip/journal/apl/101/25/10.1063/1.4767131 |
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