Soluble Ruthenium Phthalocyanines as Semiconductors for Organic Thin-Film Transistors

Ruthenium phthalocyanine (RuPcs) are multipurpose compounds characterized by their remarkable reactivity and photoelectronic properties, which yield a broad synthetic scope and easy derivatization at the axial position. However, RuPcs have been underexplored for use in organic thin-film transistors...

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Detalles Bibliográficos
Autores: García Calvo, José Luis, Cranston, Rosemary R., López Duarte, Ismael, Torres Cebada, Tomás, Lessard, Benoît H.
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/709516
Acceso en línea:http://hdl.handle.net/10486/709516
https://dx.doi.org/10.1002/celc.202300286
Access Level:acceso abierto
Palabra clave:Field effect transistors
Morphology
Ruthenium
Synthesis (chemical)
Thin film circuits
Thin film transistors
Thin films
Química
Descripción
Sumario:Ruthenium phthalocyanine (RuPcs) are multipurpose compounds characterized by their remarkable reactivity and photoelectronic properties, which yield a broad synthetic scope and easy derivatization at the axial position. However, RuPcs have been underexplored for use in organic thin-film transistors (OTFTs), and therefore new studies are necessary to provide basic insight and a first approach in this new application. Herein, two novel RuPc derivatives, containing axial pyridine substituents with aliphatic chains (RuPc(CO)(PyrSiC6) (1) and RuPc(PyrSiC6)2 (2), were synthesized, characterized, and tested as the organic semiconductor in OTFTs. RuPc thin-films were characterized by X-ray diffraction (XRD), and atomic force microscopy (AFM) to assess film morphology and microstructure. 1 displayed comparable p-type device performance to other phthalocyanine-based OTFTs of similar design, with an average field effect mobility of 2.08×10−3 cm2 V−1 s−1 in air and 1.36×10−3 cm2 V−1 s−1 in nitrogen, and threshold voltages from −11 V to −20 V. 2 was found to be non-functional as the semiconductor in the device architecture used, likely as a result of significant differences in thin-film formation. The results of this work illustrate a promising starting point for future development of RuPc electronic devices, particularly in this new family of OTFTs