Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the...

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Autores: Puigdollers i González, Joaquim, Voz Sánchez, Cristóbal, Orpella, Albert, Martin Garcia, Isidro, Soler Vilamitjana, David, Fonrodona Turon, Marta, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi, Alcubilla González, Ramón
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2002
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/47292
Acceso en línea:https://hdl.handle.net/2445/47292
Access Level:acceso abierto
Palabra clave:Deposició química en fase vapor
Transistors
Pel·lícules fines
Nanocristalls
Silici
Chemical vapor deposition
Thin films
Nanocrystals
Silicon
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spelling Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVDPuigdollers i González, JoaquimVoz Sánchez, CristóbalOrpella, AlbertMartin Garcia, IsidroSoler Vilamitjana, DavidFonrodona Turon, MartaBertomeu i Balagueró, JoanAndreu i Batallé, JordiAlcubilla González, RamónDeposició química en fase vaporTransistorsPel·lícules finesNanocristallsSiliciChemical vapor depositionTransistorsThin filmsNanocrystalsSiliconHydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.Elsevier B.V.2002info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/47292Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/S0022-3093(01)01015-8Journal of non-Crystalline Solids, 2002, vol. 299/302, num. 1, p. 400-404http://dx.doi.org/10.1016/S0022-3093(01)01015-8(c) Elsevier B.V., 2002info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/472922026-05-27T06:46:51Z
dc.title.none.fl_str_mv Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
title Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
spellingShingle Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
Puigdollers i González, Joaquim
Deposició química en fase vapor
Transistors
Pel·lícules fines
Nanocristalls
Silici
Chemical vapor deposition
Transistors
Thin films
Nanocrystals
Silicon
title_short Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
title_full Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
title_fullStr Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
title_full_unstemmed Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
title_sort Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD
dc.creator.none.fl_str_mv Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Orpella, Albert
Martin Garcia, Isidro
Soler Vilamitjana, David
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Alcubilla González, Ramón
author Puigdollers i González, Joaquim
author_facet Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Orpella, Albert
Martin Garcia, Isidro
Soler Vilamitjana, David
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Alcubilla González, Ramón
author_role author
author2 Voz Sánchez, Cristóbal
Orpella, Albert
Martin Garcia, Isidro
Soler Vilamitjana, David
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Alcubilla González, Ramón
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Deposició química en fase vapor
Transistors
Pel·lícules fines
Nanocristalls
Silici
Chemical vapor deposition
Transistors
Thin films
Nanocrystals
Silicon
topic Deposició química en fase vapor
Transistors
Pel·lícules fines
Nanocristalls
Silici
Chemical vapor deposition
Transistors
Thin films
Nanocrystals
Silicon
description Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.
publishDate 2002
dc.date.none.fl_str_mv 2002
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47292
url https://hdl.handle.net/2445/47292
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0022-3093(01)01015-8
Journal of non-Crystalline Solids, 2002, vol. 299/302, num. 1, p. 400-404
http://dx.doi.org/10.1016/S0022-3093(01)01015-8
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2002
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2002
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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