Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilic...

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Detalhes bibliográficos
Autores: Puigdollers i González, Joaquim, Orpella, Albert, Alcubilla González, Ramón, Dosev, D., Pallarés Curto, Jordi, Peiró, D., Voz Sánchez, Cristóbal, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi, Marsal Garví, Lluís F. (Lluís Francesc)
Tipo de documento: artigo
Estado:Versión aceptada para publicación
Data de publicação:2000
País:España
Recursos:Universidad de Barcelona
Repositório:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/47381
Acesso em linha:https://hdl.handle.net/2445/47381
Access Level:Acceso aberto
Palavra-chave:Silici
Pel·lícules fines
Microelectrònica
Deposició química en fase vapor
Transistors
Semiconductors
Cèl·lules solars
Silicon
Thin films
Microelectronics
Chemical vapor deposition
Solar cells
Descrição
Resumo:Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

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