Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations

In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamon...

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Detalhes bibliográficos
Autores: García Sánchez, Sergio, Íñiguez-de-la-Torre, Ignacio, García Pérez, Óscar Alberto, Mateos López, Javier, González Sánchez, Tomás, Pérez Santos, María Susana
Tipo de documento: artigo
Data de publicação:2015
País:España
Recursos:Universidad de Salamanca (USAL)
Repositório:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/130679
Acesso em linha:http://hdl.handle.net/10366/130679
Access Level:Acceso aberto
Palavra-chave:Heating
Thermal resistance
GaN diodes
Monte Carlo method
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spelling Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo SimulationsGarcía Sánchez, SergioÍñiguez-de-la-Torre, IgnacioGarcía Pérez, Óscar AlbertoMateos López, JavierGonzález Sánchez, TomásPérez Santos, María SusanaHeatingThermal resistanceGaN diodesMonte Carlo methodIn this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperatureindependent thermal conductivity is considered, the obtained values of Rth depend on the geometry and substrate material, and are constant with the dissipated power (Pdiss). When a temperaturedependent thermal conductivity is needed to correctly reproduce the thermal behaviour of the device, Rth exhibits a strong dependence on Pdiss.IEEE201620162015info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10366/130679reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésTEC2013-41640-RSA052U13Attribution-NonCommercial-NoDerivs 3.0 Unportedhttps://creativecommons.org/licenses/by-nc-nd/3.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1306792026-06-07T06:28:51Z
dc.title.none.fl_str_mv Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
title Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
spellingShingle Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
García Sánchez, Sergio
Heating
Thermal resistance
GaN diodes
Monte Carlo method
title_short Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
title_full Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
title_fullStr Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
title_full_unstemmed Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
title_sort Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
dc.creator.none.fl_str_mv García Sánchez, Sergio
Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
author García Sánchez, Sergio
author_facet García Sánchez, Sergio
Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
author_role author
author2 Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Heating
Thermal resistance
GaN diodes
Monte Carlo method
topic Heating
Thermal resistance
GaN diodes
Monte Carlo method
description In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperatureindependent thermal conductivity is considered, the obtained values of Rth depend on the geometry and substrate material, and are constant with the dissipated power (Pdiss). When a temperaturedependent thermal conductivity is needed to correctly reproduce the thermal behaviour of the device, Rth exhibits a strong dependence on Pdiss.
publishDate 2015
dc.date.none.fl_str_mv 2015
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/130679
url http://hdl.handle.net/10366/130679
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv TEC2013-41640-R
SA052U13
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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