Aging in CMOS RF linear power amplifiers: an experimental study

© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to se...

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Autores: Aragonès Cervera, Xavier|||0000-0003-1352-8675, Barajas Ojeda, Enrique|||0000-0002-2072-2268, Crespo Yepes, Albert, Mateo Peña, Diego|||0000-0001-5996-9092, Rodríguez Martínez, Rosana, Martin Martínez, Javier, Nafría Maqueda, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/343811
Acceso en línea:https://hdl.handle.net/2117/343811
https://dx.doi.org/10.1109/TMTT.2020.3041282
Access Level:acceso abierto
Palabra clave:Electronic circuits
Radio frequency
Stress
Aging
Transistors
Degradation
Integrated circuit modeling
Human computer interaction
Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
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Sumario:© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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