Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation ti...

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Autores: Furtmayr, Florian, Vielemeyer, Martin, Stutzmann, Martin, Arbiol i Cobos, Jordi, Estradé Albiol, Sònia, Peiró Martínez, Francisca, Morante i Lleonart, Joan Ramon, Eickhoff, Martin
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2008
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/24892
Acceso en línea:https://hdl.handle.net/2445/24892
Access Level:acceso abierto
Palabra clave:Cristal·lografia
Ciència dels materials
Crystallography
Materials scienc
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spelling Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-dopingFurtmayr, FlorianVielemeyer, MartinStutzmann, MartinArbiol i Cobos, JordiEstradé Albiol, SòniaPeiró Martínez, FranciscaMorante i Lleonart, Joan RamonEickhoff, MartinCristal·lografiaCiència dels materialsCrystallographyMaterials sciencThe self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.American Institute of Physics201220122008info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion7 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/24892Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.2953087Journal of Applied Physics, 2008, vol. 104, num. 3, p. 034309-1-034309-7http://dx.doi.org/10.1063/1.2953087(c) American Institute of Physics, 2008info:eu-repo/semantics/openAccessoai:recercat.cat:2445/248922026-05-29T05:05:01Z
dc.title.none.fl_str_mv Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
title Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
spellingShingle Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
Furtmayr, Florian
Cristal·lografia
Ciència dels materials
Crystallography
Materials scienc
title_short Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
title_full Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
title_fullStr Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
title_full_unstemmed Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
title_sort Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
dc.creator.none.fl_str_mv Furtmayr, Florian
Vielemeyer, Martin
Stutzmann, Martin
Arbiol i Cobos, Jordi
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Morante i Lleonart, Joan Ramon
Eickhoff, Martin
author Furtmayr, Florian
author_facet Furtmayr, Florian
Vielemeyer, Martin
Stutzmann, Martin
Arbiol i Cobos, Jordi
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Morante i Lleonart, Joan Ramon
Eickhoff, Martin
author_role author
author2 Vielemeyer, Martin
Stutzmann, Martin
Arbiol i Cobos, Jordi
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Morante i Lleonart, Joan Ramon
Eickhoff, Martin
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Cristal·lografia
Ciència dels materials
Crystallography
Materials scienc
topic Cristal·lografia
Ciència dels materials
Crystallography
Materials scienc
description The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.
publishDate 2008
dc.date.none.fl_str_mv 2008
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24892
url https://hdl.handle.net/2445/24892
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2953087
Journal of Applied Physics, 2008, vol. 104, num. 3, p. 034309-1-034309-7
http://dx.doi.org/10.1063/1.2953087
dc.rights.none.fl_str_mv (c) American Institute of Physics, 2008
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 2008
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 7 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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