Cita APA

Furtmayr, F., Vielemeyer, M., Stutzmann, M., Arbiol i Cobos, J., Estradé Albiol, S., Peiró Martínez, F., . . . Eickhoff, M. (2008). Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping.

Citación estilo Chicago

Furtmayr, Florian, Martin Vielemeyer, Martin Stutzmann, Jordi Arbiol i Cobos, Sònia Estradé Albiol, Francisca Peiró Martínez, Joan Ramon Morante i Lleonart, y Martin Eickhoff. Nucleation and Growth of GaN Nanorods On Si (111) Surfaces By Plasma-assisted Molecular Beam Epitaxy - The Influence of Si- and Mg-doping. 2008.

Cita MLA

Furtmayr, Florian, et al. Nucleation and Growth of GaN Nanorods On Si (111) Surfaces By Plasma-assisted Molecular Beam Epitaxy - The Influence of Si- and Mg-doping. 2008.