Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The...

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Detalles Bibliográficos
Autores: Fontserè Recuenco, Abel, Perez-Tomas, Amador|||0000-0002-0551-3142, Placidi, Marcel, Aguiló Llobet, Jordi|||0000-0002-4691-5754, Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Iglesias Santiso, Vanessa|||0000-0001-5831-0974, Porti i Pujal, Marc|||0000-0001-7438-3823, Bayerl, Albin, Lanza, Mario|||0000-0003-4756-8632, Nafria, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2012
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:117260
Acceso en línea:https://ddd.uab.cat/record/117260
https://dx.doi.org/urn:doi:10.1063/1.4748115
Access Level:acceso abierto
Palabra clave:III-V semiconductors
MODFETs
Atomic force microscopy
Leakage currents
Epitaxy
Descripción
Sumario:The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale.

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