Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov–de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic d...

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Detalles Bibliográficos
Autores: Castro, Eduardo V., Novoselov, Kostya S., Morozov, S. V., Peres, N. M. R., Lopes dos Santos, J. M. B., Nilsson, Johan, Guinea, Francisco, Geim, A. K., Castro, Alicia
Tipo de recurso: artículo
Fecha de publicación:2007
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:dnet:digitalcsic_::a6b0f3bfd7d66bc94582f3d63f40dcc3
Acceso en línea:http://hdl.handle.net/10261/28539
Access Level:acceso abierto
Palabra clave:Biased Bilayer Graphene
Descripción
Sumario:We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov–de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density.We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

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