Cita APA

Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., Lopes dos Santos, J. M. B., Nilsson, J., . . . Castro, A. (2007). Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect.

Citación estilo Chicago

Castro, Eduardo V., Kostya S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, Johan Nilsson, Francisco Guinea, A. K. Geim, y Alicia Castro. Biased Bilayer Graphene: Semiconductor With a Gap Tunable By the Electric Field Effect. 2007.

Cita MLA

Castro, Eduardo V., et al. Biased Bilayer Graphene: Semiconductor With a Gap Tunable By the Electric Field Effect. 2007.