Temperature and surface traps influence on the THz emission from InGaAs diodes

Monte Carlo simulations forecast Gunn-like oscillations at ~0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are an...

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Detalles Bibliográficos
Autores: Rodríguez Fernández, Alberto, Íñiguez-de-la-Torre, Ignacio, García Pérez, Óscar Alberto, González Sánchez, Sergio, Westlund, Andreas, Per-Ake, Nilsson, Grahn, Jan, González Sánchez, Tomás, Mateos López, Javier, Pérez Santos, María Susana
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/130650
Acceso en línea:http://hdl.handle.net/10366/130650
Access Level:acceso abierto
Palabra clave:THz emission
InGaAs diodes
Descripción
Sumario:Monte Carlo simulations forecast Gunn-like oscillations at ~0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the oscillations and can increase their frequency. On the other hand, the ratio between cap and recess charges plays an important role for the onset of oscillations. A high level of traps in the recess region may completely attenuate the emission.

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