Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes
In this work, the presence of an anomalous type of low-frequency noise associated with the initiation of the oscillatory regime in Gunn diodes has been studied and experimentally evidenced. When incipient instabilities begin to appear in the device, its intermittent nature drastically enhances the n...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/130683 |
| Acceso en línea: | http://hdl.handle.net/10366/130683 |
| Access Level: | acceso abierto |
| Palabra clave: | Noise Gunn oscillations InGaAs diodes |
| Sumario: | In this work, the presence of an anomalous type of low-frequency noise associated with the initiation of the oscillatory regime in Gunn diodes has been studied and experimentally evidenced. When incipient instabilities begin to appear in the device, its intermittent nature drastically enhances the noise at frequencies well below the oscillation. For higher bias voltages, the oscillation becomes purer and the associated low-frequency noise disappears. |
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