Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1...

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Autores: Fonrodona Turon, Marta, Soler Vilamitjana, David, Escarré i Palou, Jordi, Villar, Fernando, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi, Saboundji, A., Coulon, N., Mohammed-Brahim, T.
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2006
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/47298
Acceso en línea:https://hdl.handle.net/2445/47298
Access Level:acceso abierto
Palabra clave:Transistors
Pel·lícules fines
Silici
Nanocristalls
Deposició química en fase vapor
Thin films
Silicon
Nanocrystals
Chemical vapor deposition
id ES_759d4f3abe0fdcc978ce0753ca44add4
oai_identifier_str oai:diposit.ub.edu:2445/47298
network_acronym_str ES
network_name_str España
repository_id_str
spelling Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrateFonrodona Turon, MartaSoler Vilamitjana, DavidEscarré i Palou, JordiVillar, FernandoBertomeu i Balagueró, JoanAndreu i Batallé, JordiSaboundji, A.Coulon, N.Mohammed-Brahim, T.TransistorsPel·lícules finesSiliciNanocristallsDeposició química en fase vaporTransistorsThin filmsSiliconNanocrystalsChemical vapor depositionAmorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).Elsevier B.V.2006info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/47298Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.217Thin Solid Films, 2006, vol. 501, num. 1-2, p. 303-306http://dx.doi.org/10.1016/j.tsf.2005.07.217(c) Elsevier B.V., 2006info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/472982026-05-27T06:46:51Z
dc.title.none.fl_str_mv Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
title Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
spellingShingle Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
Fonrodona Turon, Marta
Transistors
Pel·lícules fines
Silici
Nanocristalls
Deposició química en fase vapor
Transistors
Thin films
Silicon
Nanocrystals
Chemical vapor deposition
title_short Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
title_full Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
title_fullStr Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
title_full_unstemmed Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
title_sort Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
dc.creator.none.fl_str_mv Fonrodona Turon, Marta
Soler Vilamitjana, David
Escarré i Palou, Jordi
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Saboundji, A.
Coulon, N.
Mohammed-Brahim, T.
author Fonrodona Turon, Marta
author_facet Fonrodona Turon, Marta
Soler Vilamitjana, David
Escarré i Palou, Jordi
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Saboundji, A.
Coulon, N.
Mohammed-Brahim, T.
author_role author
author2 Soler Vilamitjana, David
Escarré i Palou, Jordi
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Saboundji, A.
Coulon, N.
Mohammed-Brahim, T.
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Transistors
Pel·lícules fines
Silici
Nanocristalls
Deposició química en fase vapor
Transistors
Thin films
Silicon
Nanocrystals
Chemical vapor deposition
topic Transistors
Pel·lícules fines
Silici
Nanocristalls
Deposició química en fase vapor
Transistors
Thin films
Silicon
Nanocrystals
Chemical vapor deposition
description Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).
publishDate 2006
dc.date.none.fl_str_mv 2006
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47298
url https://hdl.handle.net/2445/47298
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.217
Thin Solid Films, 2006, vol. 501, num. 1-2, p. 303-306
http://dx.doi.org/10.1016/j.tsf.2005.07.217
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2006
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2006
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869410992911286272
score 15,300724

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