α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated orga...

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Authors: Schamoni, Hannah, Noever, Simon, Nickel, Bert, Stutzmann, Martin, Garrido, Jose A.
Format: article
Status:Published version
Publication Date:2016
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/159386
Online Access:http://hdl.handle.net/10261/159386
Access Level:Open access
Keyword:Thin film deposition
Field effect transistors
Carrier mobility
Organic semiconductors
Thin film structure
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spelling α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistorsSchamoni, HannahNoever, SimonNickel, BertStutzmann, MartinGarrido, Jose A.Thin film depositionField effect transistorsCarrier mobilityOrganic semiconductorsThin film structureWhile organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a period of several days, which is a consequence of the low threshold voltage of DH6T-based SGOFETs. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications.This work has been partially supported by the Nanosystems Initiative Munich (NIM) and the Deutsche Forschungsgemeinschaft (DFG) through the SFB 1032.Peer ReviewedAmerican Institute of PhysicsGerman Research FoundationNanosystems Initiative MunichConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2018201820162018info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/159386reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.4942407Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1593862026-05-22T06:33:51Z
dc.title.none.fl_str_mv α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
title α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
spellingShingle α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
Schamoni, Hannah
Thin film deposition
Field effect transistors
Carrier mobility
Organic semiconductors
Thin film structure
title_short α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
title_full α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
title_fullStr α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
title_full_unstemmed α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
title_sort α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
dc.creator.none.fl_str_mv Schamoni, Hannah
Noever, Simon
Nickel, Bert
Stutzmann, Martin
Garrido, Jose A.
author Schamoni, Hannah
author_facet Schamoni, Hannah
Noever, Simon
Nickel, Bert
Stutzmann, Martin
Garrido, Jose A.
author_role author
author2 Noever, Simon
Nickel, Bert
Stutzmann, Martin
Garrido, Jose A.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv German Research Foundation
Nanosystems Initiative Munich
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Thin film deposition
Field effect transistors
Carrier mobility
Organic semiconductors
Thin film structure
topic Thin film deposition
Field effect transistors
Carrier mobility
Organic semiconductors
Thin film structure
description While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a period of several days, which is a consequence of the low threshold voltage of DH6T-based SGOFETs. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications.
publishDate 2016
dc.date.none.fl_str_mv 2016
2018
2018
2018
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/159386
url http://hdl.handle.net/10261/159386
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.4942407
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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