Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacitance-voltage and deep level transient spectroscopy measu...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59300 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59300 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Chemical-Vapor-Deposition Interface Control Layer Passivation Temperature Sulfide GaAs. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacitance-voltage and deep level transient spectroscopy measurements. We deduce an inverse correlation between the insulator composition-the N/Si ratio-and the density of interface traps: those films with the maximum N/Si ratio (1.49) produce devices with the minimum trap density-2 x 10(12) cm(-2) eV(-1) at 0.42 eV. above the midgap. We explain the influence of film composition on the interface trap density in terms of a substitution of phosphorous vacancies at the InP surface, V-p, by N atoms coming from the insulator, N-Vp. The values obtained in our research for the interface trap distribution were similar to other published results for devices that use chemical and/or physical passivation processes of the InP surface prior to the deposition of the insulator. |
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