Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes

Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integrati...

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Autores: Ali, Khadiza, Fernández, Laura, Kherelden, Mohammad A., Makarova, Anna A., Píš, Igor, Bondino, Federica, Lawrence, James, G. de Oteyza, Dimas, Usachov, Dmitry Yu, Vyalikh, Denis V., García de Abajo, F. Javier, Abd El-Fattah, Z. M., Ortega Conejero, José Enrique, Schiller, Frederik
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universidad del País Vasco
Repositorio:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/53622
Acceso en línea:http://hdl.handle.net/10810/53622
Access Level:acceso abierto
Palabra clave:boron nitride nanostripes
photoemission
scanning tunneling microscopy
uniaxial electronic bands
H-BN
graphene
corrugation
ultraviolet
monolayer
growth
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spelling Atomically-Precise Texturing of Hexagonal Boron Nitride NanostripesAli, KhadizaFernández, LauraKherelden, Mohammad A.Makarova, Anna A.Píš, IgorBondino, FedericaLawrence, JamesG. de Oteyza, DimasUsachov, Dmitry YuVyalikh, Denis V.García de Abajo, F. JavierAbd El-Fattah, Z. M.Ortega Conejero, José EnriqueSchiller, Frederikboron nitride nanostripesphotoemissionscanning tunneling microscopyuniaxial electronic bandsH-BNgraphenecorrugationultravioletmonolayergrowthMonolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.The authors acknowledge financial support from the Spanish Ministry of Science and Innovation (Grants MAT-2017-88374-P, PID2019-107338RBC63, MAT2017-88492-R, and Severo Ochoa CEX2019-000910-S), the CSIC (Grant 2020AEP178), the Basque Government (Grant IT-1255-19), the Marie Sklodowska-Curie European Union's Horizon 2020 program (grant MagicFACE 797109), the European Research Council (Advanced Grant 789104-eNANO), and Elettra Sincrotrone Trieste for providing access to its synchrotron radiation facilities. I.P. and F.B. acknowledge funding from EUROFEL, and D.U. from the Ministry of Science and Higher Education of the Russian Federation [Grant No. 075-15-2020-797 (13.1902.21.0024)]. A.A.M. acknowledges the German Ministry for Education and Research (Grant 05K19KER).WileyEuropean Commission202120212021info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10810/53622reponame:Addi. Archivo Digital para la Docencia y la Investigacióninstname:Universidad del País VascoInglésinfo:eu-repo/grantAgreement/MICINN/MAT-2017-88374-P/info:eu-repo/grantAgreement/MICINN/PID2019-107338RBC63/info:eu-repo/grantAgreement/MICINN/MAT2017-88492-R/info:eu-repo/grantAgreement/MICINN/CEX2019-000910-S/info:eu-repo/grantAgreement/EC/H2020/797109https://onlinelibrary.wiley.com/doi/10.1002/advs.202101455info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/3.0/es/2021 The Authors. Advanced Science published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Atribución 3.0 Españaoai:addi.ehu.eus:10810/536222026-06-18T09:23:17Z
dc.title.none.fl_str_mv Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
title Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
spellingShingle Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
Ali, Khadiza
boron nitride nanostripes
photoemission
scanning tunneling microscopy
uniaxial electronic bands
H-BN
graphene
corrugation
ultraviolet
monolayer
growth
title_short Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
title_full Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
title_fullStr Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
title_full_unstemmed Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
title_sort Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes
dc.creator.none.fl_str_mv Ali, Khadiza
Fernández, Laura
Kherelden, Mohammad A.
Makarova, Anna A.
Píš, Igor
Bondino, Federica
Lawrence, James
G. de Oteyza, Dimas
Usachov, Dmitry Yu
Vyalikh, Denis V.
García de Abajo, F. Javier
Abd El-Fattah, Z. M.
Ortega Conejero, José Enrique
Schiller, Frederik
author Ali, Khadiza
author_facet Ali, Khadiza
Fernández, Laura
Kherelden, Mohammad A.
Makarova, Anna A.
Píš, Igor
Bondino, Federica
Lawrence, James
G. de Oteyza, Dimas
Usachov, Dmitry Yu
Vyalikh, Denis V.
García de Abajo, F. Javier
Abd El-Fattah, Z. M.
Ortega Conejero, José Enrique
Schiller, Frederik
author_role author
author2 Fernández, Laura
Kherelden, Mohammad A.
Makarova, Anna A.
Píš, Igor
Bondino, Federica
Lawrence, James
G. de Oteyza, Dimas
Usachov, Dmitry Yu
Vyalikh, Denis V.
García de Abajo, F. Javier
Abd El-Fattah, Z. M.
Ortega Conejero, José Enrique
Schiller, Frederik
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv European Commission
dc.subject.none.fl_str_mv boron nitride nanostripes
photoemission
scanning tunneling microscopy
uniaxial electronic bands
H-BN
graphene
corrugation
ultraviolet
monolayer
growth
topic boron nitride nanostripes
photoemission
scanning tunneling microscopy
uniaxial electronic bands
H-BN
graphene
corrugation
ultraviolet
monolayer
growth
description Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.
publishDate 2021
dc.date.none.fl_str_mv 2021
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10810/53622
url http://hdl.handle.net/10810/53622
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/grantAgreement/MICINN/MAT-2017-88374-P/
info:eu-repo/grantAgreement/MICINN/PID2019-107338RBC63/
info:eu-repo/grantAgreement/MICINN/MAT2017-88492-R/
info:eu-repo/grantAgreement/MICINN/CEX2019-000910-S/
info:eu-repo/grantAgreement/EC/H2020/797109
https://onlinelibrary.wiley.com/doi/10.1002/advs.202101455
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/3.0/es/
Atribución 3.0 España
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/3.0/es/
Atribución 3.0 España
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Wiley
publisher.none.fl_str_mv Wiley
dc.source.none.fl_str_mv reponame:Addi. Archivo Digital para la Docencia y la Investigación
instname:Universidad del País Vasco
instname_str Universidad del País Vasco
reponame_str Addi. Archivo Digital para la Docencia y la Investigación
collection Addi. Archivo Digital para la Docencia y la Investigación
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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