Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes

Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integrati...

Descripción completa

Detalles Bibliográficos
Autores: Ali, Khadiza, Fernández, Laura, Kherelden, Mohammad A., Makarova, Anna A., Píš, Igor, Bondino, Federica, Lawrence, James, G. de Oteyza, Dimas, Usachov, Dmitry Yu, Vyalikh, Denis V., García de Abajo, F. Javier, Abd El-Fattah, Z. M., Ortega Conejero, José Enrique, Schiller, Frederik
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universidad del País Vasco
Repositorio:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/53622
Acceso en línea:http://hdl.handle.net/10810/53622
Access Level:acceso abierto
Palabra clave:boron nitride nanostripes
photoemission
scanning tunneling microscopy
uniaxial electronic bands
H-BN
graphene
corrugation
ultraviolet
monolayer
growth
Descripción
Sumario:Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.

Similares en LA Referencia