Modeling the breakdown spots in silicon dioxide films as point contacts
Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes....
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116280 |
| Acceso en línea: | https://ddd.uab.cat/record/116280 https://dx.doi.org/urn:doi:10.1063/1.124566 |
| Access Level: | acceso abierto |
| Palabra clave: | Point contacts Silicon Dielectric breakdown Dielectric thin films Semiconductor thin films Thin film structure Elemental semiconductors Experiment design III-V semiconductors Semiconductor device modeling |
| Sumario: | Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. Depending on the area of the breakdown spots, the conduction properties of the breakdown paths are shown to be those of a classical Sharvin point contact or of a quantum point contact. |
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