Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/17931 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/17931 |
| Access Level: | acceso abierto |
| Palabra clave: | Multiple cell upsets single bit upsets single events soft errors SRAMs Electrónica (Física) Física nuclear Ordenadores Circuitos integrados 2207 Física Atómica y Nuclear 1203 Ciencia de Los Ordenadores 2203.07 Circuitos Integrados |
| Sumario: | This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments). |
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