The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance

Over the past few years, Low-Gain Avalanche Detectors (LGADs) have demonstrated excellent timing performance, showing great potential for use in 4D tracking of high-energy charged particles. Carbon co-doping is a key factor for enhancing LGAD performance, which are detectors with intrinsic amplifica...

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Detalles Bibliográficos
Autores: Villegas, Jairo, Dougados, Florent, Torres Muñoz, Carmen, Fernandez-Martinez, Pablo, Jiménez Ramos, María del Carmen, Hidalgo, Salvador
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/176954
Acceso en línea:https://hdl.handle.net/11441/176954
https://doi.org/10.3390/s25175571
Access Level:acceso abierto
Palabra clave:LGAD
X-rays and charged-particle detectors
alpha spectrometry
dopant diffusion in silicon
id ES_6d69cfb85d7f9d84849dffcea645fc74
oai_identifier_str oai:idus.us.es:11441/176954
network_acronym_str ES
network_name_str España
repository_id_str
spelling The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and PerformanceVillegas, JairoDougados, FlorentTorres Muñoz, CarmenFernandez-Martinez, PabloJiménez Ramos, María del CarmenHidalgo, SalvadorLGADX-rays and charged-particle detectorsalpha spectrometrydopant diffusion in siliconOver the past few years, Low-Gain Avalanche Detectors (LGADs) have demonstrated excellent timing performance, showing great potential for use in 4D tracking of high-energy charged particles. Carbon co-doping is a key factor for enhancing LGAD performance, which are detectors with intrinsic amplification, in harsh radiation environments. This work presents a broad pre-irradiation characterization of the latest carbon-co-implanted (or carbonated) LGADs fabricated at IMB-CNM. The results indicate that the addition of carbon reduces the nominal gain of the devices compared with non-carbonated detectors. Furthermore, a comprehensive study is presented on how carbon co-implantation can either enhance or suppress the diffusion of the multiplication layer during LGAD fabrication, depending on the device structure and fabrication parameters.MDPIFísica Aplicada IIMinisterio de Ciencia, Innovación y Universidades (MICIU). EspañaEuropean UnionUniversidad de SevillaJunta de Andalucía2025info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/176954https://doi.org/10.3390/s25175571reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésSensors, 25 (17), 5571.CEX2023-001397-MPID2023-148418NB-C42PID2023-148418NB-C44PDC2023-145925-C32ASTRO21/1.1/1RYC2022-037296-IVI PPIT-UShttps://www.mdpi.com/1424-8220/25/17/5571info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1769542026-06-17T12:51:07Z
dc.title.none.fl_str_mv The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
title The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
spellingShingle The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
Villegas, Jairo
LGAD
X-rays and charged-particle detectors
alpha spectrometry
dopant diffusion in silicon
title_short The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
title_full The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
title_fullStr The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
title_full_unstemmed The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
title_sort The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance
dc.creator.none.fl_str_mv Villegas, Jairo
Dougados, Florent
Torres Muñoz, Carmen
Fernandez-Martinez, Pablo
Jiménez Ramos, María del Carmen
Hidalgo, Salvador
author Villegas, Jairo
author_facet Villegas, Jairo
Dougados, Florent
Torres Muñoz, Carmen
Fernandez-Martinez, Pablo
Jiménez Ramos, María del Carmen
Hidalgo, Salvador
author_role author
author2 Dougados, Florent
Torres Muñoz, Carmen
Fernandez-Martinez, Pablo
Jiménez Ramos, María del Carmen
Hidalgo, Salvador
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Física Aplicada II
Ministerio de Ciencia, Innovación y Universidades (MICIU). España
European Union
Universidad de Sevilla
Junta de Andalucía
dc.subject.none.fl_str_mv LGAD
X-rays and charged-particle detectors
alpha spectrometry
dopant diffusion in silicon
topic LGAD
X-rays and charged-particle detectors
alpha spectrometry
dopant diffusion in silicon
description Over the past few years, Low-Gain Avalanche Detectors (LGADs) have demonstrated excellent timing performance, showing great potential for use in 4D tracking of high-energy charged particles. Carbon co-doping is a key factor for enhancing LGAD performance, which are detectors with intrinsic amplification, in harsh radiation environments. This work presents a broad pre-irradiation characterization of the latest carbon-co-implanted (or carbonated) LGADs fabricated at IMB-CNM. The results indicate that the addition of carbon reduces the nominal gain of the devices compared with non-carbonated detectors. Furthermore, a comprehensive study is presented on how carbon co-implantation can either enhance or suppress the diffusion of the multiplication layer during LGAD fabrication, depending on the device structure and fabrication parameters.
publishDate 2025
dc.date.none.fl_str_mv 2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/176954
https://doi.org/10.3390/s25175571
url https://hdl.handle.net/11441/176954
https://doi.org/10.3390/s25175571
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Sensors, 25 (17), 5571.
CEX2023-001397-M
PID2023-148418NB-C42
PID2023-148418NB-C44
PDC2023-145925-C32
ASTRO21/1.1/1
RYC2022-037296-I
VI PPIT-US
https://www.mdpi.com/1424-8220/25/17/5571
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv MDPI
publisher.none.fl_str_mv MDPI
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869410350500151296
score 15,811543

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