Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high in...

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Autores: Gaggl, Philipp, Gsponer, Andreas, Thalmeier, Richard, Waid, Simon, Pellegrini, Giulio, Godignon, Philippe, Rafí, Joan Marc, Bergauer, Thomas
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/363422
Acceso en línea:http://hdl.handle.net/10261/363422
https://api.elsevier.com/content/abstract/scopus_id/85147138462
Access Level:acceso abierto
Palabra clave:Detector design and construction technologies and materials | Materials for solid-state detectors | Radiation damage to detector materials (solid state) | Radiation-hard detectors
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spelling Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiationGaggl, PhilippGsponer, AndreasThalmeier, RichardWaid, SimonPellegrini, GiulioGodignon, PhilippeRafí, Joan MarcBergauer, ThomasDetector design and construction technologies and materials | Materials for solid-state detectors | Radiation damage to detector materials (solid state) | Radiation-hard detectorsThe unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding in the context of future high luminosity high energy physics experiments, wide-bandgap materials such as 4H-SiC could offer better performance due to low dark currents and higher atomic displacement thresholds. In this work, the detector performance of 50 µm thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1 × 1016 neq/cm2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. A calibration of the absolute number of collected charges was performed using a GATE simulation. The obtained results are compared to previously performed UV transient current technique (TCT) studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. At fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2, CCEs of 64 % and 51 % are obtained, decreasing to 15 % at 5 × 1015 neq/cm2. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias, roughly 600 V and 900 V for neutron fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.This project has received funding from the Austrian Research Promotion Agency FFG, Grant Number 883652. Production and development of the 4H-SiC samples was supported by the Spanish State Research Agency (AEI) and the European Regional Development Fund (ERDF), ref. RTC-2017-6369-3.Peer reviewedInstitute of Physics PublishingAgencia Estatal de Investigación (España)European CommissionAustrian Research Promotion AgencyMinisterio de Ciencia, Innovación y Universidades (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/363422https://api.elsevier.com/content/abstract/scopus_id/85147138462reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/RTC-2017-6369-3Journal of Instrumentationhttps://iopscience.iop.org/article/10.1088/1748-0221/18/01/C01042Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3634222026-05-22T06:33:51Z
dc.title.none.fl_str_mv Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
title Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
spellingShingle Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
Gaggl, Philipp
Detector design and construction technologies and materials | Materials for solid-state detectors | Radiation damage to detector materials (solid state) | Radiation-hard detectors
title_short Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
title_full Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
title_fullStr Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
title_full_unstemmed Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
title_sort Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation
dc.creator.none.fl_str_mv Gaggl, Philipp
Gsponer, Andreas
Thalmeier, Richard
Waid, Simon
Pellegrini, Giulio
Godignon, Philippe
Rafí, Joan Marc
Bergauer, Thomas
author Gaggl, Philipp
author_facet Gaggl, Philipp
Gsponer, Andreas
Thalmeier, Richard
Waid, Simon
Pellegrini, Giulio
Godignon, Philippe
Rafí, Joan Marc
Bergauer, Thomas
author_role author
author2 Gsponer, Andreas
Thalmeier, Richard
Waid, Simon
Pellegrini, Giulio
Godignon, Philippe
Rafí, Joan Marc
Bergauer, Thomas
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Agencia Estatal de Investigación (España)
European Commission
Austrian Research Promotion Agency
Ministerio de Ciencia, Innovación y Universidades (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Detector design and construction technologies and materials | Materials for solid-state detectors | Radiation damage to detector materials (solid state) | Radiation-hard detectors
topic Detector design and construction technologies and materials | Materials for solid-state detectors | Radiation damage to detector materials (solid state) | Radiation-hard detectors
description The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding in the context of future high luminosity high energy physics experiments, wide-bandgap materials such as 4H-SiC could offer better performance due to low dark currents and higher atomic displacement thresholds. In this work, the detector performance of 50 µm thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1 × 1016 neq/cm2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. A calibration of the absolute number of collected charges was performed using a GATE simulation. The obtained results are compared to previously performed UV transient current technique (TCT) studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. At fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2, CCEs of 64 % and 51 % are obtained, decreasing to 15 % at 5 × 1015 neq/cm2. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias, roughly 600 V and 900 V for neutron fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.
publishDate 2023
dc.date.none.fl_str_mv 2023
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/363422
https://api.elsevier.com/content/abstract/scopus_id/85147138462
url http://hdl.handle.net/10261/363422
https://api.elsevier.com/content/abstract/scopus_id/85147138462
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/RTC-2017-6369-3
Journal of Instrumentation
https://iopscience.iop.org/article/10.1088/1748-0221/18/01/C01042
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Physics Publishing
publisher.none.fl_str_mv Institute of Physics Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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