Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leaka...

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Detalles Bibliográficos
Autores: Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernández-Tejero, Javier, Fleta, Celeste, Hacker, J., Lacasta Llácer, Carlos, Miñano, Mercedes, Renzmann, M., Rossi, E., Sawyer, C., Sperlich, D., Stegler, M., Ullán Comes, Miguel, Unno, Y.
Tipo de recurso: artículo
Estado:Versión enviada para evaluación y publicación
Fecha de publicación:2019
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/208580
Acceso en línea:http://hdl.handle.net/10261/208580
Access Level:acceso abierto
Palabra clave:Si microstrip and pad detectors
Detector design and construction technologies and materials
Particle tracking detectors (Solid-state detectors)
Radiation-hard detectors
Descripción
Sumario:For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -500 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ·cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.

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